DataSheet.jp

GF2304 の電気的特性と機能

GF2304のメーカーはGeneral Semiconductorです、この部品の機能は「N-Channel Enhancement-Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 GF2304
部品説明 N-Channel Enhancement-Mode MOSFET
メーカ General Semiconductor
ロゴ General Semiconductor ロゴ 




このページの下部にプレビューとGF2304ダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

GF2304 Datasheet, GF2304 PDF,ピン配置, 機能
GF2304
N-Channel Enhancement-Mode MOSFET
VDS 30V RDS(ON) 0.117ID 2.5A
TO-236AB (SOT-23)
.118 (3.0)
.110 (2.8)
.020 (0.51)
.015 (0.37)
3
12
.041 (1.03) .041 (1.03)
.035 (0.89) .035 (0.89)
Top View
TGREENNCFHET®
0.031 (0.8)
0.035 (0.9)
Pin Configuration
1. Gate
2. Source
3. Drain
Dimensions in inches
and (millimeters)
0.079 (2.0)
0.037 (0.95)
0.037 (0.95)
Mounting Pad Layout
.020 (0.51) .020 (0.51)
.015 (0.37) .015 (0.37)
.098 (2.5)
.091 (2.3)
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 04
Features
• Advanced trench process technology
• High density cell design for ultra-low on-resistance
• Popular SOT-23 package with copper lead-frame
for superior thermal and electrical capabilities
• Compact and low profile
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source-Voltage
Continuous Drain Current TJ = 150°C
Pulsed Drain Current(1)
Maximum Power Dissipation(2)
TA = 25°C
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance(2)
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
30
± 20
2.5
10
1.25
0.80
–55 to +150
100
Notes:
(1) Pulse width limited by maximum junction temperature.
(2) Surface mounted on FR4 board, (1” x 1”, 2oz. Cu)
Unit
V
V
A
A
W
°C
°C/W
5/3/01

1 Page





GF2304 pdf, ピン配列
GF2304
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
10
4.5V
8 VGS = 5V, 6V, 7V, 8V, 10V
4.0V
6
3.5V
4
3.0V
10
VDS = 10V
8
6
4
--55°C
25°C
TJ = 125°C
22
2.5V
0
01 2 3 4 5
VDS -- Drain-to-Source Voltage (V)
Fig. 3 – Capacitance
220
200 f = 1 MHz
VGS = 0V
180
160
Ciss
140
120
100
80
60
40
20
Crss
0
0
Coss
5
10
15 20
25
VDS Drain-to-Source Voltage (V)
30
0
0
0.18
0.12
0.06
12
34
VGS -- Gate-to-Source Voltage (V)
Fig. 4 – On-Resistance
vs. Drain Current
VGS = 4.5V
10V
5
0
02 4 6 8
ID -- Drain Current (A)
10
Fig. 5 – Gate Charge
10
VDS = 15V
ID = 2.5A
8
6
4
2
0
0 1234
Qg -- Gate Charge (nC)


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ GF2304 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
GF230-82

Diode ( Rectifier )

American Microsemiconductor
American Microsemiconductor
GF2304

N-Channel Enhancement-Mode MOSFET

General Semiconductor
General Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap