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IRFP7430PBF の電気的特性と機能

IRFP7430PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFP7430PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFP7430PBF Datasheet, IRFP7430PBF PDF,ピン配置, 機能
StrongIRFETTM
IRFP7430PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free*
D
G
S
G
Gate
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.0mΩ
1.3mΩ
c404A
195A
D
S
D
G
TO-247AC
IRFP7430PbF
D
Drain
S
Source
Ordering Information
Base Part Number
IRFP7430PbF
Package Type
TO-247
Standard Pack
Form
Tube
Quantity
50
Complete Part Number
IRFP7430PbF
6.0
ID = 100A
4.0
TJ = 125°C
2.0
TJ = 25°C
0.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
500
Limited By Package
400
300
200
100
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
February 19, 2015

1 Page





IRFP7430PBF pdf, ピン配列
IRFP7430PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs Forward Transconductance
150 ––– –––
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
––– 300 460
Gate-to-Source Charge
––– 77 –––
Gate-to-Drain ("Miller") Charge
––– 98 –––
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
––– 202 –––
––– 32 –––
Rise Time
––– 105 –––
Turn-Off Delay Time
––– 160 –––
Fall Time
––– 100 –––
Input Capacitance
––– 14240 –––
Output Capacitance
––– 2130 –––
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
hEffective Output Capacitance (Time Related)
–––
–––
–––
1460
2605
2920
–––
–––
–––
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
Min. Typ. Max.
™––– ––– 376
ISM Pulsed Source Current
Ãd(Body Diode)
––– ––– 1576
VSD
dv/dt
Diode Forward Voltage
fPeak Diode Recovery
––– 0.86 1.2
––– 2.7 –––
trr Reverse Recovery Time
––– 52 –––
––– 52 –––
Qrr Reverse Recovery Charge
––– 97 –––
––– 97 –––
IRRM Reverse Recovery Current
––– 2.3 –––
Units
S
nC
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
gVGS = 10V
ns VDD = 20V
ID = 30A
RG = 2.7Ω
gVGS = 10V
pF VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
iVGS = 0V, VDS = 0V to 32V
hVGS = 0V, VDS = 0V to 32V
Units
A
A
V
V/ns
ns
nC
A
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
gTJ = 25°C, IS = 100A, VGS = 0V
TJ = 175°C, IS = 100A, VDS = 40V
TJ = 25°C VR = 34V,
TJ = 125°C
TJ = 25°C
IF = 100A
gdi/dt = 100A/μs
TJ = 125°C
TJ = 25°C
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 19, 2015


3Pages


IRFP7430PBF 電子部品, 半導体
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
IRFP7430PbF
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
800
700
600
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
500 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
400 during avalanche).
6. Iav = Allowable avalanche current.
300 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
200 tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
100 ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 19, 2015

6 Page



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部品番号部品説明メーカ
IRFP7430PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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