|
|
MX1011B200YのメーカーはPhilipsです、この部品の機能は「Microwave power transistor」です。 |
部品番号 | MX1011B200Y |
| |
部品説明 | Microwave power transistor | ||
メーカ | Philips | ||
ロゴ | |||
このページの下部にプレビューとMX1011B200Yダウンロード(pdfファイル)リンクがあります。 Total 12 pages
DISCRETE SEMICONDUCTORS
DATA SHEET
MX1011B200Y
Microwave power transistor
Product specification
Supersedes data of January 1995
1997 Feb 18
1 Page Philips Semiconductors
Microwave power transistor
Product specification
MX1011B200Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
VCEO
VEBO
ICM
Ptot
Tstg
Tj
Tsld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
CONDITIONS
open emitter
RBE = 0
open base
open collector
tp = 10 µs; δ = 1%
Tmb < 75 °C; tp ≤ 10 µs; δ ≤ 1%
t ≤ 10 s; note 1
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
65
65
15
3
11.5
515
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
Note
1. Up to 0.2 mm from ceramic.
600
handbook, halfpage
P tot
(W)
400
MLC465
200
0
50
0
50 100 150 200
Tmb (oC)
tp = 10 µs; δ = 1%.
Fig.2 Power derating curve.
1997 Feb 18
3
3Pages Philips Semiconductors
Microwave power transistor
Product specification
MX1011B200Y
List of components (see Fig.3)
COMPONENT
C1
C2
C3
C4
C5
L1, L2
L3
DESCRIPTION
capacitor
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
0.65 mm copper wire; total length = 26 mm;
height of loop = 10 mm
0.85 mm silver wire; total length = 30 mm;
height of loop = 15 mm
VALUE
100 pF
10 µF; 50 V
63 V; 1000 µF
−
0.8 to 8 pF
−
ORDERING INFORMATION
ATC 100A101kp50x
−
−
Erie1250-003
Tekelec 729-1
−
−−
250
handbook, halfpage
PL
(W)
230
210
190
170
150
15
25
MLC466
35 45
Pi (W)
Class C pulse operation.
tp = 10 µs; δ = 1%; VCC = 50 V; f = 1.09 GHz.
In broadband test circuit as shown in Fig.3.
Fig.4 Load power as a function of input power.
handbook,5h5alfpage
ηc
(%)
50
MLC467
45
40
15 25 35 45
Pi (W)
Class C pulse operation.
tp = 10 µs; δ = 1%; VCC = 50 V; f = 1.09 GHz.
In broadband test circuit as shown in Fig.3.
Fig.5 Collector efficiency as a function of input
power.
1997 Feb 18
6
6 Page | |||
ページ | 合計 : 12 ページ | ||
|
PDF ダウンロード | [ MX1011B200Y データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MX1011B200Y | Microwave power transistor | Philips |