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IRFU1018EPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFU1018EPbF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 10 pages
		

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IRFU1018EPbF Datasheet, IRFU1018EPbF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97129
IRFR1018EPbF
IRFU1018EPbF
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
7.1m:
max. 8.4m:
G
ID (Silicon Limited)
79A c
S ID (Package Limited)
56A
D-Pak
I-Pak
IRFR1018EPbF IRFU1018EPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
TJ
TSTG
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy e
Avalanche Current d
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
RθJA
Junction-to-Case k
Junction-to-Ambient (PCB Mount) jk
Junction-to-Ambient k
Notes  through ‰ are on page 2
www.irf.com
D
Drain
Max.
79c
56c
56
315
110
0.76
± 20
21
-55 to + 175
300
S
Source
Units
A
W
W/°C
V
V/ns
°C
88
47
11
Typ.
–––
–––
–––
Max.
1.32
40
110
mJ
A
mJ
Units
°C/W
1
3/8/08

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