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PDF D845 Data sheet ( Hoja de datos )
| Número de pieza | D845 | |
| Descripción | NPN Silicon Power Transistors | |
| Fabricantes | MCC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D845 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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MCC
omponents
21201 Itasca Street Chatsworth
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Features
• With TO-3P(I) package
• Recommended for 60~80W high-fidelity frequency amplifier output
stage
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
150
150
5.0
12
120
-55 to +150
-55 to +150
Unit
V
V
V
A
W
OC
OC
2SD845
NPN Silicon
Power Transistors
TO-3P(I)
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=50mAdc, IB=0)
ICBO Collector-Base Cutoff Current
(VCB=150Vdc,IE=0)
IEBO Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
150
---
---
--- Vdc
50 uAdc
50 uAdc
hFE
V CE(sat)
Forward Current Transfer ratio
(IC=1.0Adc, VCE=5.0Vdc)
Collector-Emitter Saturation Voltage
(IC=5.0Adc, IB=0.5Adc)
100
---
--- ---
2.0 Vdc
DIMENSIONS
INCHES
DIM MIN
MAX
A ---
.130
B ---
.071
C .079
D .067
.091
E .030
.051
F .012
.028
G ---
.626
H .205
.220
I .207 .222
J .118 .134
K .039
L .079
M .748
.827
N .177
O .354
P .110
Q .067
.091
R .512
.551
S ---
.189
MM
MIN MAX
--- 3.30
--- 1.80
2.00
1.70 2.30
.75 1.30
.30 .70
--- 15.90
5.20 5.60
5.25 5.65
3.00 3.40
1.00
2.00
19.00
21.00
4.50
9.00
2.80
1.70 2.30
13.00
14.00
--- 4.80
NOTE
∅
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet D845.PDF ] | |
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