AS081Q1200W Datasheet PDF - Roithner
| Part Number | AS081Q1200W | |
| Description | High Power Stacked Infrared Laser Diode Array | |
| Manufacturers | Roithner | |
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AS081Q1200W
TECHNICAL DATA
High Power Stacked Infrared Laser Diode Array
Features
• Output Power: 1200 W qCW
• 780-830 nm Emission Wavelength
• Spectral Width: ≤4 nm
• High Reliability, High Efficiency
• QCW stack can be designed according to the
customer of non-standard products heat sink
package
Applications
• Laser Pumping
• Medical Usage
• High power laser diode applications
Specifications (25°C)
Item
Optical Specifications
qCW Output Power
qCW Output Power / Bar
Array Length
Center Wavelength
Wavelength Tolerance
Spectral Width
Package Style
Bar Length
Number of Bars
Wavelength Temperature Coefficient
Beam Divergence
Electrical Specifications
Slope Efficiency
Conversion Efficiency
Threshold Current
Operating Current
Operating Voltage
Absolute Maximum Ratings
Reverse Voltage
Operating Temperature
Storage Temperature
Symbol
PO
PS
L
λC
Δλ
θ┴×θ║
ES
NS
ITH
IF
UF
UR
TOP
TSTG
Value
1200
100
10
780-830
±5
≤4
Micro Channel
0.5
20
0.3
40x8
≥1
≥ 40%
≤ 25
≤ 90
≤ 40
2.5
+10 … +40
-40 ... +85
Unit
W
W
mm
nm
nm
nm
mm
nm/°C
deg
W/A
A
A
V
V
°C
°C
20.09.2010
AS081Q1200W
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AS081Q1200W electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ AS081Q1200W.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| AS081Q1200W | The function is High Power Stacked Infrared Laser Diode Array. Roithner | |
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