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4N60AF の電気的特性と機能

4N60AFのメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 4N60AF
部品説明 N-Channel Power MOSFET / Transistor
メーカ nELL
ロゴ nELL ロゴ 




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4N60AF Datasheet, 4N60AF PDF,ピン配置, 機能
SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(4A, 600Volts)
DESCRIPTION
The Nell 4N60 is a three-terminal silicon
device with current conduction capability
of 4A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 2.5Ω@VGS = 10V
Ultra low gate charge(20nC max.)
Low reverse transfer capacitance
(CRSS = 8pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
G
DS
TO-251 (I-PAK)
(4N60F)
D
D
G
S
TO-252 (D-PAK)
(4N60G)
GDS
TO-220AB
(4N60A)
GDS
TO-220F
(4N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
4
600
2.5 @ VGS = 10V
20
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 10

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4N60AF pdf, ピン配列
SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA, VGS = 0V
600
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250µA, VDS = VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
gFS
Gate threshold voltage
Forward transconductance
ID = 2A, VGS = 10V
VGS=VDS, ID=250μA
VDS=40V, lD=2A
2.0
DYNAMIC CHARACTERISTICS
CISS
Input capacitance
COSS
Output capacitance
CRSS
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
tf Fall time
QG Total gate charge
QGS
Gate to source charge
QGD
Gate to drain charge (Miller charge)
VDS = 25V, VGS = 0V, f =1MHz
VDD = 300V, VGS = 10V,
ID = 4A, RGS = 25Ω(Note 1, 2)
VDD = 480V, VGS = 10V, ID = 4A
(Note 1, 2)
Typ.
0.6
2.2
4.7
520
70
8.0
13
45
25
35
15
3.5
7.0
Max. UNIT
V
V/ºC
10
μA
100
100
-100
nA
2.5 Ω
4.0 V
S
670
90 pF
11
35
100
ns
60
80
20
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 4A, VGS = 0V
1.4 V
Is (IsD)
Continous source to drain current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
4
ISM Pulsed source current
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
G
(Gate)
S (Source)
ISD = 4A, VGS = 0V,
dIF/dt = 100A/µs
A
16
250 ns
1.5 μC
www.nellsemi.com
Page 3 of 10


3Pages


4N60AF 電子部品, 半導体
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Fig.1 Breakdown voltage variation vs.
Temperature
1.2
1.1
1.0
0.9
0.8
-100 -50
0
Note:
1. VGS = 0V
2. lD = 250µA
50 100 150 200
Junction temperature, Tj (°C)
4N60 Series RRooHHSS
Nell High Power Products
Fig.2 On-Resistance variation vs. junction
vs. temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
-50
0
Note:
1. VGS = 10V
2. lD = 2A
50 100 150 200
Junction-Temperature, TJ (°C)
Fig.3-1 Maximum Safe operating area
(for 4N60A)
Operation in This Area is Limited by RDS(ON)
101
100
10-1
100
Note:
1. TJ = 25°C
2. TJ = 150°C
3. Single Pulse
101
100µs
1ms
10ms
DC
102 103
Drain-Source voltage, VDS (V)
Fig.3-2 Maximum Safe operating area
(for 4N60AF)
Operation in This Area is Limited by RDS(ON)
101
100µs
1ms
10ms
100 10ms
DC
10-1
102
100
Note:
1. TJ = 25°C
2. TJ = 150°C
3. Single Pulse
101
102
Drain-Source voltage, VDS (V)
103
Fig.3-3 Maximum Safe operating area
(for 4N60F/4N60G)
Operation in This Area is Limited by RDS(ON)
101 10µs
100µs
1ms
100 10ms
DC
10-1
Note:
1. TJ = 25°C
2. TJ = 150°C
3. Single Pulse
102
100 101 102 103
Drain-Source voltage, VDS (V)
Fig.4 Maximum drain current vs. Case
temperature
5
4
3
2
1
0
25 50 75 100 125 150
Case temperature, TC (°C)
www.nellsemi.com
Page 6 of 10

6 Page



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部品番号部品説明メーカ
4N60A

N-Channel Power MOSFET / Transistor

nELL
nELL
4N60AF

N-Channel Power MOSFET / Transistor

nELL
nELL


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