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PDF 4N60F Data sheet ( Hoja de datos )
| Número de pieza | 4N60F | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
| Logotipo |  |
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SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(4A, 600Volts)
DESCRIPTION
The Nell 4N60 is a three-terminal silicon
device with current conduction capability
of 4A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 2.5Ω@VGS = 10V
Ultra low gate charge(20nC max.)
Low reverse transfer capacitance
(CRSS = 8pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
G
DS
TO-251 (I-PAK)
(4N60F)
D
D
G
S
TO-252 (D-PAK)
(4N60G)
GDS
TO-220AB
(4N60A)
GDS
TO-220F
(4N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
4
600
2.5 @ VGS = 10V
20
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 10
1 page  
SEMICONDUCTOR
■ TEST CIRCUITS AND WAVEFORMS (Cont.)
4N60 Series RRooHHSS
Nell High Power Products
Fig.2A Switching test circuit
VDS
VGS
RG
10V
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
RL
D.U.T.
VDD
Fig.2B Switching Waveforms
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.3A Gate charge test circuit
Fig.3B Gate charge waveform
Same Type as
12V 50kΩ D.U.T.
0.2µF
0.3µF
VDS
VGS
3mA
D.U.T.
VGS
10V
QGS
QG
QGD
Charge
Fig.4A Unclamped lnductive switching test circuit
VDS
L
10V
RG
tp
D.U.T.
VDD
Fig.4B Unclamped lnductive switching
waveforms
BVDSS
lAS
VDD
lD(t)
tp
VDS(t)
Time
www.nellsemi.com
Page 5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 4N60F.PDF ] | |
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