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PDF IKW50N65H5 Data sheet ( Hoja de datos )
| Número de pieza | IKW50N65H5 | |
| Descripción | IGBT | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKW50N65H5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page  
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=27.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.50mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=50.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.65 2.10
1.85 -
V
- 1.95 -
-
-
1.45 1.80
1.40 -
V
- 1.40 -
3.2 4.0 4.8 V
- - 40.0 µA
- - 4000.0
- - 100 nA
- 62.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=50.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 3000 -
- 65 - pF
- 11 -
- 120.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
rG=12.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 21 - ns
- 15 - ns
- 180 - ns
- 18 - ns
- 0.52 - mJ
- 0.18 - mJ
- 0.70 - mJ
5 Rev.1.1,2012-11-09
5 Page 
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
2.50
2.25
2.00
Eoff
Eon
Ets
1.2
Eoff
Eon
Ets
1.0
1.75
0.8
1.50
1.25 0.6
1.00
0.4
0.75
0.50
0.2
0.25
0.00
5
15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=25A,Dynamictestcircuitin
Figure E)
0.0
25
50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
175
1.2
Eoff
Eon
Ets
1.0
0.8
16
130V
520V
14
12
10
0.6 8
6
0.4
4
0.2
2
0.0
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
0 20 40 60 80 100 120
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
Figure 16. Typicalgatecharge
(IC=50A)
11 Rev.1.1,2012-11-09
11 Page | ||
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