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PDF IS61LV12816L Data sheet ( Hoja de datos )
| Número de pieza | IS61LV12816L | |
| Descripción | 128K x 16 HIGH-SPEED CMOS STATIC RAM | |
| Fabricantes | Integrated Silicon Solution | |
| Logotipo |  |
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IS61LV12816L
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
ISSI®
OCTOBER 2005
FEATURES
• High-speed access time: 8, 10 ns
• Operating Current: 50mA (typ.)
• Stand by Current: 700µA (typ.)
• TTL and CMOS compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
DESCRIPTION
The ISSI IS61LV12816L is a high-speed, 2,097,152-bit
static RAM organized as 131,072 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields access times
as fast as 8 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61LV12816L is packaged in the JEDEC standard
44-pin TSOP (Type II), 44-pin LQFP, and 48-pin mini BGA
(6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128Kx16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
1
1 page  
IS61LV12816L
ISSI ®
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol
ICC
Parameter
VDD Operating
Supply Current
Test Conditions
VDD = Max., CE = VIL
IOUT = 0 mA, f = Max.
Com.
Ind.
typ.(2)
-8 ns
Min. Max.
— 65
— 70
— 50
-10 ns
Min. Max.
— 60
— 65
— 50
ISB1 TTL Standby
VDD = Max.,
Current
VIN = VIH or VIL
(TTL Inputs)
CE ≥ VIH, f = max
Com.
Ind.
— 30
— 35
— 25
— 30
ISB2 CMOS Standby VDD = Max.,
Current
CE ≥ VDD – 0.2V,
(CMOS Inputs) VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
typ.(2)
—3
—4
— 700
—3
—4
— 700
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=3.3V, TA=25oC. Not 100% tested.
Unit
mA
mA
mA
mA
µA
CAPACITANCE(1)
Symbol Parameter
Conditions
Max.
Unit
CIN Input Capacitance
VIN = 0V
6 pF
COUT
Input/Output Capacitance
VOUT = 0V
8 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
5
5 Page 
IS61LV12816L
ISSI ®
WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) (1,3)
ADDRESS
t WC
ADDRESS 1
t WC
ADDRESS 2
OE
CE LOW
t SA
WE
UB, LB
DOUT
DIN
t PBW
t HZWE
DATA UNDEFINED
WORD 1
HIGH-Z
t SD
DATAIN
VALID
t HA
t SA
t PBW
WORD 2
t HA
t LZWE
t HD
t SD
DATAIN
VALID
t HD
UB_CEWR4.eps
Notes:
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The tSA, tHA, tSD, and tHD timing is
referenced to the rising or falling edge of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
11
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