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FY8ABJ-03のメーカーはPowerex Power Semiconductorsです、この部品の機能は「Pch POWER MOSFET HIGH-SPEED SWITCHING USE」です。 |
部品番号 | FY8ABJ-03 |
| |
部品説明 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE | ||
メーカ | Powerex Power Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとFY8ABJ-03ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
FY8ABJ-03
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
Dimensions in mm
q 4V DRIVE
q VDSS ............................................................................... –30V
q rDS (ON) (MAX) ............................................................. 20mΩ
q ID ......................................................................................... –8A
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
5.0
1.8 MAX.
0.4
1.27
SOURCE
GATE
DRAIN
SOP-8
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
–30
±20
–8
–56
–8
–2.1
–8.4
2.0
–55 ~ +150
–55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
1 Page –2.0
–1.6
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
Tc = 25°C
Pulse Test
–1.2
–0.8
–0.4
0
0
ID = –32A
–24A
–16A
–8A
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–40
–32
Tc = 25°C
VDS = –10V
Pulse Test
–24
–16
–8
0
0 –2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
104
VGS = 0V
f = 1MHZ
7
5 Ciss
3
2
103 Coss
7
5 Crss
3
2–5–7–10–1 –2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
Tc = 25°C
Pulse Test
VGS = –4V
32
24
16
–10V
8
0
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
102
7
5 Tc =25°C 75°C 125°C
3
2
101
7
5 VDS = –10V
Pulse Test
3
2
100
–5
–7–100
–2 –3 –5 –7–101
–2 –3 –5
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
Tch = 25°C
7 VDD = –15V
5 VGS = –10V
td(off)
RGEN = RGS = 50Ω
3
2
tf
102
7 tr
5
3 td(on)
2
101
–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7–101
DRAIN CURRENT ID (A)
Sep.1998
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ FY8ABJ-03 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FY8ABJ-03 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |
FY8ABJ-03 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors |