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FY8ABJ-03 の電気的特性と機能

FY8ABJ-03のメーカーはPowerex Power Semiconductorsです、この部品の機能は「Pch POWER MOSFET HIGH-SPEED SWITCHING USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 FY8ABJ-03
部品説明 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
メーカ Powerex Power Semiconductors
ロゴ Powerex Power Semiconductors ロゴ 




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FY8ABJ-03 Datasheet, FY8ABJ-03 PDF,ピン配置, 機能
FY8ABJ-03
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
“
Dimensions in mm
q 4V DRIVE
q VDSS ............................................................................... –30V
q rDS (ON) (MAX) ............................................................. 20m
q ID ......................................................................................... –8A
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
Œ
5.0
1.8 MAX.
0.4
1.27
ŒŽ

Œ  Ž SOURCE
 GATE
 ‘ ’ “ DRAIN
‘’“
SOP-8
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
–30
±20
–8
–56
–8
–2.1
–8.4
2.0
–55 ~ +150
–55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998

1 Page





FY8ABJ-03 pdf, ピン配列
–2.0
–1.6
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
Tc = 25°C
Pulse Test
–1.2
–0.8
–0.4
0
0
ID = –32A
–24A
–16A
–8A
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–40
–32
Tc = 25°C
VDS = –10V
Pulse Test
–24
–16
–8
0
0 –2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
104
VGS = 0V
f = 1MHZ
7
5 Ciss
3
2
103 Coss
7
5 Crss
3
2–5–7–10–1 –2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
Tc = 25°C
Pulse Test
VGS = –4V
32
24
16
–10V
8
0
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
102
7
5 Tc =25°C 75°C 125°C
3
2
101
7
5 VDS = –10V
Pulse Test
3
2
100
–5
–7–100
–2 –3 –5 –7–101
–2 –3 –5
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
Tch = 25°C
7 VDD = –15V
5 VGS = –10V
td(off)
RGEN = RGS = 50
3
2
tf
102
7 tr
5
3 td(on)
2
101
–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7–101
DRAIN CURRENT ID (A)
Sep.1998


3Pages





ページ 合計 : 4 ページ
 
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[ FY8ABJ-03 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
FY8ABJ-03

HIGH-SPEED SWITCHING USE

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
FY8ABJ-03

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

Powerex Power Semiconductors
Powerex Power Semiconductors


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