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G30N60HS の電気的特性と機能

G30N60HSのメーカーはInfineonです、この部品の機能は「High Speed IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 G30N60HS
部品説明 High Speed IGBT
メーカ Infineon
ロゴ Infineon ロゴ 




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G30N60HS Datasheet, G30N60HS PDF,ピン配置, 機能
SGP30N60HS
SGW30N60HS
High Speed IGBT in NPT-technology
30% lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
PG-TO-220-3-1
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE IC Eoff) Tj Marking
Package
SGP30N60HS
600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1
SGW30N60HS
600V
30 480µJ 150°C G30N60HS PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25
start TJ=25°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
EAS
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
600
41
30
112
112
165
±20
±30
10
250
-55...+150
175
260
Unit
V
A
mJ
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov 09

1 Page





G30N60HS pdf, ピン配列
SGP30N60HS
SGW30N60HS
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=400V,IC=30A,
VGE=0/15V,
RG=11
Lσ1) =60nH,
Cσ1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
20
21
250
25
0.60
0.55
1.15
Unit
max.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=400V,IC=30A,
VGE=0/15V,
RG= 1.8
Lσ1) =60nH,
Cσ1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VCC=400V,IC=30A,
VGE=0/15V,
RG= 11
Lσ1) =60nH,
Cσ1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
16
13
122
29
0.78
0.48
1.26
20
19
274
27
0.91
0.70
1.61
Unit
max.
ns
mJ
ns
mJ
1) Leakage inductance Lσ an d Stray capacity C σ due to test circuit in Figure E.
Power Semiconductors
3
Rev. 2.4 Nov 09


3Pages


G30N60HS 電子部品, 半導体
SGP30N60HS
SGW30N60HS
td(off)
100ns
tf
td(on)
10ns
0A
tr
10A 20A 30A 40A 50A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=11,
Dynamic test circuit in Figure E)
100 ns td(off)
tf
td(on)
10 ns tr
0Ω
5Ω
10Ω 15Ω 20Ω 25Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
tr
td(on)
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=30A, RG=11,
Dynamic test circuit in Figure E)
5,5V
5,0V
4,5V
4,0V
3,5V
3,0V
max.
2,5V
2,0V
typ.
1,5V
min.
1,0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.7mA)
Power Semiconductors
6
Rev. 2.4 Nov 09

6 Page



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部品番号部品説明メーカ
G30N60HS

High Speed IGBT

Infineon
Infineon


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