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PDF STK531U369A-E Data sheet ( Hoja de datos )
| Número de pieza | STK531U369A-E | |
| Descripción | Inverter IPM | |
| Fabricantes | ON Semiconductor | |
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STK531U369A-E
Inverter IPM
for 3-phase Motor Drive
www.onsemi.com
Overview
This “Inverter IPM” is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase
outputs in a single SIP module (Single-In line Package). Output stage uses IGBT/FRD technology and implements
Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal
Boost diodes are provided for high side gate boost drive.
Function
Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit
All control input and status output are at low voltage levels directly compatible with microcontrollers
Built-in cross conduction prevention
Externally accessible embedded thermistor for substrate temperature measurement
The level of the over current protection is adjustable with the external resistor, “RSD”
Certification
UL Recognized (File number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Supply voltage
Collector-emitter voltage
Output current
Output peak current
Pre-driver voltage
Input signal voltage
FAULT terminal voltage
Maximum power dissipation
Junction temperature
Storage temperature
Operating case temperature
Tightening torque
Isolation voltage
Symbol
VCC
VCE
Io
Iop
VD1,2,3,4
VIN
VFAULT
Pd
Tj
Tstg
Tc
Vis
Remarks
P to N, surge < 500V
P to U, V, W or U, V, W, to N
P, N, U, V, W terminal current
P, N, U, V, W terminal current at Tc = 100C
P, N, U, V, W terminal current, PW = 1ms
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
HIN1, 2, 3, LIN1, 2, 3
FAULT terminal
IGBT per 1 channel
IGBT, FRD
IPM case temperature
A screw part
50Hz sine wave AC 1 minute
*1
*2
*3
*4
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between P and N terminal.
*2 : VD1=VB1 to U, VD2=VB2 to V, VD3=VB3 to W, VD4=VDD to VSS terminal voltage.
*3 : Flatness of the heat-sink should be lower than 0.15mm.
*4 : Test conditions : AC2500V, 1 second.
Ratings
450
600
±10
±5
±20
20
0.3 to VDD
0.3 to VDD
31.2
150
40 to +125
20 to +100
0.9
2000
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 13 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
February 2015 - Rev. 1
1
Publication Order Number :
STK531U369A-E/D
1 page  
STK531U369A-E
Test Circuit
(The tested phase : U+ shows the upper side of the U phase and U- shows the lower side of the U phase.)
ICE / IR(BD)
U+ V+ W+ U- V- W-
M
13 13 13 10
6
2
N
10 6
2 16 16 16
U(BD) V(BD) W(BD)
M 951
N 26 26 26
VD1=15V
VD2=15V
VD3=15V
VD4=15V
9M
10
5
6
1
2
25
26 N
Fig.1
ICE
A
VCE
VCE(SAT) (Test by pulse)
U+ V+ W+ U- V- W-
M
13 13 13 10
6
2
N
10 6
2 16 16 16
m 17 18 19 20 21 22
VD1=15V
VD2=15V
VD3=15V
VD4=15V
5V
9M
10
5
6
V Ic
1
VCE(SAT)
2
25
mN
26
27
VF (Test by pulse)
U+ V+ W+ U- V- W-
M
13 13 13 10
6
2
N
10 6
2 16 16 16
ID
M
N
VD1 VD2 VD3
951
10 6
2
VD4
25
26
Fig.2
M
V VF
N
IF
Fig.3
www.onsemi.com
5
Fig.4
5 Page 
STK531U369A-E
CB capacitor value calculation for bootstrap circuit
Calculate conditions
Parameter
Upper side power supply.
Total gate charge of output power IGBT at 15V.
Upper limit power supply low voltage protection.
Upper side power dissipation.
ON time required for CB voltage to fall from 15V to UVLO
Symbol
VBS
QG
UVLO
IDmax
TONmax
Value
15
89
12
400
-
Unit
V
nC
V
μA
s
Capacitance calculation formula
Thus, the following formula are true
VBS CB QG IDMAX TONMAX = UVLO CB
therefore,
CB = (QG + IDMAX TONMAX) / (VBS UVLO)
The relationship between TONMAX and CB becomes as follows. CB is recommended to be approximately 3 times the value calculated
above. The recommended value of CB is in the range of 1 to 47μF, however, this value needs to be verified prior to production.
CB vs Tonmax
100
10
1
0.1
0.01
0.1
1 10
Tonmax [ms]
Fig. 12 Tonmax - CB characteristic
100
1000
www.onsemi.com
11
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