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Datasheet LN9T15B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | LN9T15B | Application Guide and peripheral device design 请 联络代理商获取 完整应用指南
澎湃驱动力 源于力生美
padg-1002 应用指南 V1.0.0
LN9T15A/B 应用指南与外围器件设计
一、概述
LN9T15A/B 是专门设计用于高性能开关电源适配器的高压集成功率控制器集成电路，内 部包括 PWM 控制器 |  Lii Semiconductor | data |
LN9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LN9014 | Low Level and General Purpose Amplifiers Micro Electronics amplifier | | |
| 2 | LN963185UNA-B4 | LED LINE LIGHT SOURCE LED LINE LIGHT SOURCE
B4 Size LN963185UNA-B4
0.2 2.0 + –0
Global Parts No.
LNR314401
Unit: mm
A
3 − 2.5
PCB
Resister
12.0 5.0 ± 0.1
A
256.0 Effective Illumination Length 276.5 6.6 5.3 1.2
Lens
Case
4.0
3.0
LED A−A
1.0 Max
s Absolute Maximum Ratings (Ta = 25°C) Item Supply Vo  Panasonic Semiconductor data | | |
| 3 | LN9926L | 20V Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD.
20V Dual N-Channel Enhancement-Mode MOSFET
VDS= 20V RDS(ON), [email protected], Ids@4A = 28 m RDS(ON), [email protected], Ids@2A = 40 m Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li io  LRC mosfet | | |
| 4 | LN9926LT1G | Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD.
LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
Fea LRC mosfet | | |
| 5 | LN9T08A | High performance AC / DC switching power supply controller ICs 澎湃驅動力 源於力生美
LN9T08A
REV.B
高性能 AC/DC 開關電源控制器集成電路
主要特點
v 内置集成 700V 高壓功率開關 v 内置高压启动电流源，固定启动延时 v 具有前沿消隱功能的逐周期電流限制 v 內部軟啟動功能 v 输出過載 过流 � Lii Semiconductor controller | | |
| 6 | LN9T15A | Application Guide and peripheral device design 请 联络代理商获取 完整应用指南
澎湃驱动力 源于力生美
padg-1002 应用指南 V1.0.0
LN9T15A/B 应用指南与外围器件设计
一、概述
LN9T15A/B 是专门设计用于高性能开关电源适配器的高压集成功率控制器集成电路，内 部包括 PWM 控制器 Lii Semiconductor data | | |
| 7 | LN9T15B | Application Guide and peripheral device design 请 联络代理商获取 完整应用指南
澎湃驱动力 源于力生美
padg-1002 应用指南 V1.0.0
LN9T15A/B 应用指南与外围器件设计
一、概述
LN9T15A/B 是专门设计用于高性能开关电源适配器的高压集成功率控制器集成电路，内 部包括 PWM 控制器 Lii Semiconductor data | |
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| Número de pieza | Descripción | Fabricantes | |
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