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PDF IRFD9120 Data sheet ( Hoja de datos )
| Número de pieza | IRFD9120 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Power MOSFET
IRFD9120, SiHFD9120
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 100
VGS = - 10 V
18
3.0
9.0
Single
0.60
S
HVMDIP
G
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
HVMDIP
IRFD9120PbF
SiHFD9120-E3
IRFD9120
SiHFD9120
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at - 10 V
TA = 25 °C
TA = 100 °C
TA = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = - 2.0 A (see fig. 12).
c. ISD - 6.8 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
LIMIT
- 100
± 20
- 1.0
- 0.70
- 8.0
0.0083
140
- 1.0
0.13
1.3
- 5.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91139
S10-2464-Rev. D, 25-Oct-10
www.vishay.com
1
1 page  
TA, Ambient Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
IRFD9120, SiHFD9120
Vishay Siliconix
VDS
VGS
Rg
RD
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VGS
10 %
td(on) tr
td(off) tf
90 %
VDS
Fig. 10b - Switching Time Waveforms
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Document Number: 91139
S10-2464-Rev. D, 25-Oct-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFD9120.PDF ] | |
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