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PDF A1018 Data sheet ( Hoja de datos )
| Número de pieza | A1018 | |
| Descripción | PNP Transistor - 2SA1018 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SA1018
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1473
s Features
q High collector to emitter voltage VCEO.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–250
–200
–5
–100
–70
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICEO
VCEO
VEBO
hFE*
VCE = –120V, IB = 0, Ta = 60˚C
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
–200
–5
60
–1 µA
V
V
220
Collector to emitter saturation voltage VCE(sat)
IC = –50mA, IB = –5mA
–1.5 V
Transition frequency
fT
VCB = –10V, IE = 10mA, f = 200MHz
50
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f= 1MHz
10 pF
*hFE Rank classification
Rank
Q
hFE 60 ~ 150
R
100 ~ 220
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet A1018.PDF ] | |
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