Datasheet P36NF06 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	P36NF06	STP36NF06 STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET™ II Power MOSFET General features Type STP36NF06 STP36NF06FP VDSS 60V 60V RDS(on) <0.040Ω <0.040Ω ID 30A 18A(1) 1. Current limited by package ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Ap	STMicroelectronics	data

P36 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	P3602A	solid state crowbar devices Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, B	Teccor Electronics	data
2	P3602ACMC	solid state crowbar devices Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, B	Teccor Electronics	data
3	P3602Z	solid state crowbar devices Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, B	Teccor Electronics	data
4	P3606BD	N-Channel Enhancement Mode MOSFET P3606BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 36mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drai	UNIKC	mosfet
5	P3606BK	N-Channel Field Effect Transistor NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P3606BK PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 40mΩ ID 17A D G S D DDD #1 S S S G G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDI	NIKO-SEM	transistor
6	P3606HK	Dual N-Channel Enhancement Mode MOSFET P3606HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 38mΩ @VGS = 10V ID 15A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continu	UNIKC	mosfet
7	P3606HK	Dual N-Channel Field Effect Transistor NIKO-SEM Dual N-Channel Enhancement Mode P3606HK Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 38mΩ ID 15A D1 D1 D2 D2 #1 S1 G1 S2 G2 G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/T	NIKO-SEM	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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