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16N25 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 16N25
部品説明 FQP16N25
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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16N25 Datasheet, 16N25 PDF,ピン配置, 機能
FQP16N25
N-Channel QFET® MOSFET
250 V, 16 A, 230 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
November 2013
Features
• 16 A, 250 V, RDS(on) = 230 m(Max.) @ VGS = 10 V,
ID = 8.0 A
• Low Gate Charge (Typ. 27 nC)
• Low Crss (Typ. 23 pF)
• 100% Avalanche Tested
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S
FQP16N25
250
16
10
64
± 30
560
16
14.2
5.5
142
1.14
-55 to +150
300
FQP16N25
0.88
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2000 Fairchild Semiconductor Corporation
FQP16N25 Rev. C1
1
www.fairchildsemi.com

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