DataSheet.jp

BUZ905 の電気的特性と機能

BUZ905のメーカーはMagnatecです、この部品の機能は「P-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ905
部品説明 P-CHANNEL POWER MOSFET
メーカ Magnatec
ロゴ Magnatec ロゴ 




このページの下部にプレビューとBUZ905ダウンロード(pdfファイル)リンクがあります。

Total 4 pages

No Preview Available !

BUZ905 Datasheet, BUZ905 PDF,ピン配置, 機能
MAGNA
TEC
MECHANICAL DATA
Dimensions in mm
25.0
+0.1
-0.15
10.90 ± 0.1
8.7 Max.
1.50
Typ.
11.60
± 0.3
BUZ905
BUZ906
P–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
12
R 4.0 ± 0.1
R 4.4 ± 0.2
Pin 1 – Gate
TO–3
Pin 2 – Drain
Case – Source
FEATURES
• HIGH SPEED SWITCHING
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• N–CHANNEL ALSO AVAILABLE AS
BUZ900 & BUZ901
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VDSX
Drain – Source Voltage
VGSS
Gate – Source Voltage
ID Continuous Drain Current
ID(PK)
Body Drain Diode
PD
Total Power Dissipation
@ Tcase = 25°C
Tstg Storage Temperature Range
Tj Maximum Operating Junction Temperature
RθJC
Thermal Resistance Junction – Case
BUZ905
-160V
BUZ906
-200V
±14V
-8A
-8A
125W
–55 to 150°C
150°C
1.0°C/W
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94

1 Page





BUZ905 pdf, ピン配列
MAGNA
TEC
Typical Output Characteristics
-9
-7V
-8
-7 -6V
TC = 25˚C
-6
-5V
-5
-4 -4V 125W
-3
-3V
-2
-2V
-1
0
0 -10 -20 -30 -40 -50 -60 -70 -80 -90
VDS — DRAIN – SOURCE VOLTAGE (V)
Forward Bias Safe Operating Area
-10
DC OPERATION
TC = 25˚C
-1
-0.1
BUZ905
BUZ906
BUZ905
BUZ906
Typical Output Characteristics
-9
-8
-7 -7V
TC = 75˚C
-6 -6V
-5
-5V
-4 125W
-4V
-3
-3V
-2
-2V
-1
0
0 -10 -20 -30 -40 -50 -60 -70 -80 -90
VDS — DRAIN – SOURCE VOLTAGE (V)
Transconductance
100
V DS = -20V
10
TC = 25˚C
1 TC = 75˚C
-0.01
-1
-10
-8
-6
-10 -100
VDS — DRAIN – SOURCE VOLTAGE (V)
Drain – Source Voltage
vs
Gate – Source Voltage
-1000
TC = 25˚C
ID = -6A
-4
-2
0
0
ID = -3A
ID = -1A
-2 -4 -6 -8 -10 -12 -14
VGS — GATE – SOURCE VOLTAGE (V)
0.1
0 -1 -2 -3 -4 -5 -6 -7 -8
ID — DRAIN CURRENT (A)
Typical Transfer Characteristics
-9
-8 VDS = -10V
-7
TC = 25˚C
-6
TC = 75˚C
-5
TC = 100˚C
-4
-3
-2
-1
0
0 -1 -2 -3 -4 -5 -6 -7
VGS — GATE – SOURCE VOLTAGE (V)
-8
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ BUZ905 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
BUZ90

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ900

(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET

Magna
Magna
BUZ900

Trans MOSFET N-CH 160V 8A 3-Pin(2+Tab) TO-3

New Jersey Semiconductor
New Jersey Semiconductor
BUZ900DP

(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET

ETC
ETC


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap