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PDF IXTH180N10T Data sheet ( Hoja de datos )
| Número de pieza | IXTH180N10T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTH180N10T
IXTQ180N10T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
100
180
6.4
V
A
mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 3.3 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Maximum Ratings
100
100
± 30
180
75
450
25
750
V
V
V
A
A
A
A
mJ
3 V/ns
G
DS
TO-3P (IXTQ)
G
D
S
(TAB)
(TAB)
480 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
5.5 g
6g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
± 200 nA
5 µA
250 µA
5.4 6.4 m Ω
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
© 2006 IXYS CORPORATION All rights reserved
DS99712 (11/06)
1 page  
70
65
60
55
50
45
40
35
30
25
20
15
10
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 3.3Ω
VGS = 10V
VDS = 50V
I D = 50A
I D = 25A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
180
160 t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
140 VDS = 50V
120
I D = 50A
75
70
65
60
100 55
80 50
I D = 25A
60 45
40 40
20 35
0 30
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
38
37
36
35 t f
td(off) - - - -
RG = 3.3Ω, VGS = 10V
34 VDS = 50V
33
TJ = 125ºC
32
31 TJ = 25ºC
30
25
30 35 40
ID - Amperes
45
64
61
58
55
52
49
46
43
40
50
© 2006 IXYS CORPORATION All rights reserved
IXTH180N10T
IXTQ180N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
65
60 TJ = 25ºC
55
50
45 RG = 3.3Ω
40 VGS = 10V
35 VDS = 50V
30
25 TJ = 125ºC
20
15
10
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
38
t f td(off) - - - -
37 RG = 3.3Ω, VGS = 10V
36 VDS = 50V
25A < I D < 50A
64
61
58
35 55
34 52
33 49
32 46
31
I D = 25A, 50A
43
30 40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
160 250
t f td(off) - - - -
140 TJ = 125ºC, VGS = 10V
220
VDS = 50V
120 190
100 160
25A < I D < 50A
80
I D = 25A, 50A
130
60 100
40 70
20 40
2 4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF:T_180N10T (61) 11-20-06-A.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTH180N10T.PDF ] | |
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