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IXTA180N10T7 の電気的特性と機能

IXTA180N10T7のメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTA180N10T7
部品説明 Power MOSFET ( Transistor )
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTA180N10T7 Datasheet, IXTA180N10T7 PDF,ピン配置, 機能
PreliminaryTechnical Information
TrenchMVTM
IXTA180N10T7
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
100
180
6.4
V
A
m
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Transient
TC = 25° C
Package Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 175° C, RG =3.3
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
100 V
100 V
± 30
180
120
450
25
750
3
V
A
A
A
A
mJ
V/ns
1
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
480
-55 ... +175
175
-55 ... +175
300
260
3
W Features
Ultra-low On Resistance
°C Unclamped Inductive Switching (UIS)
°C rated
°C Low package inductance
°C
°C
- easy to drive and to protect
175 ° C Operating Temperature
g Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
± 200 nA
5 µA
250 µA
5.4 6.4 m
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
© 2006 IXYS CORPORATION All rights reserved
DS99711 (11/06)

1 Page





IXTA180N10T7 pdf, ピン配列
IXTA180N10T7
180
160
140
120
100
80
60
40
20
0
0
180
160
140
120
100
80
60
40
20
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
0.2 0.4 0.6 0.8
VDS - Volts
1
Fig. 3. Output Characteristics
@ 150ºC
VGS = 10V
9V
8V
1.2
7V
6V
5V
0.4 0.8 1.2 1.6
VDS - Volts
2
2.4 2.8
Fig. 5. RDS(on) Normalized to ID = 90A Value
vs. Drain Current
3
2.8
2.6 TJ = 175ºC
2.4
2.2
2
1.8 VGS = 10V
1.6 15V - - - -
1.4
1.2 TJ = 25ºC
1
0.8
0.6
0
50 100 150 200 250 300
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
Fig. 2. Extended Output Characteristics
@ 25ºC
300
275
VGS = 10V
9V
250 8V
225
200
175
150 7V
125
100
75
50 6V
25
0
0123456
VDS - Volts
7
Fig. 4. RDS(on) Normalized to ID = 90A Value
vs. Junction Temperature
2.8
2.6 VGS = 10V
2.4
2.2
2
1.8 I D = 180A
1.6 I D = 90A
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
140
External Lead Current Limit for TO-263 (7-Lead)
120
100
80 External Lead Current Limit for TO-3P, TO-220, & TO-263
60
40
20
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXTA180N10T

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation
IXTA180N10T7

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation


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