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IXTP180N10T の電気的特性と機能

IXTP180N10TのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTP180N10T
部品説明 Power MOSFET ( Transistor )
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTP180N10T Datasheet, IXTP180N10T PDF,ピン配置, 機能
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA180N10T
IXTP180N10T
VDSS = 100V
ID25 = 180A
RDS(on) 6.4mΩ
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
Maximum Ratings
100
100
V
V
± 30 V
180 A
75 A
450 A
25 A
750 mJ
480 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in
2.5 g
3.0 g
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
± 100 nA
5 μA
100 μA
5.7 6.4 mΩ
G
S
TO-220 (IXTP)
(TAB)
G DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Ultra-low On Resistance
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z 175 °C Operating Temperature
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
z DC/DC Converters and Off-line UPS
z Primary Switch for 24V and 48V
Systems
z Distributed Power Architechtures
and VRMs
z Electronic Valve Train Systems
z High Current Switching Applications
z High Voltage Synchronous Recifier
© 2008 IXYS CORPORATION, All rights reserved
DS99651A(3/08)

1 Page





IXTP180N10T pdf, ピン配列
180
160
140
120
100
80
60
40
20
0
0.0
180
160
140
120
100
80
60
40
20
0
0.0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
0.2 0.4 0.6 0.8 1.0
VDS - Volts
Fig. 3. Output Characteristics
@ 150ºC
VGS = 10V
9V
8V
7V
6V
5V
0.4 0.8 1.2 1.6 2.0 2.4
VDS - Volts
1.2
2.8
Fig. 5. RDS(on) Normalized to ID = 90A Value
vs. Drain Current
3.0
2.8
2.6 TJ = 175ºC
2.4
2.2
2.0
1.8 VGS = 10V
1.6 15V - - - -
1.4
TJ = 25ºC
1.2
1.0
0.8
0.6
0
50 100 150 200 250 300
ID - Amperes
IXTA180N10T
IXTP180N10T
Fig. 2. Extended Output Characteristics
@ 25ºC
300
275 VGS = 10V
9V
250 8V
225
200
175
150 7V
125
100
75
50 6V
25
0
0123456
VDS - Volts
7
Fig. 4. RDS(on) Normalized to ID = 90A Value
vs. Junction Temperature
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
VGS = 10V
I D = 180A
I D = 90A
-25 0 25 50 75 100 125
TJ - Degrees Centigrade
150
175
Fig. 6. Drain Current vs. Case Temperature
90
80 External Lead Current Limit
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved


3Pages


IXTP180N10T 電子部品, 半導体
IXTA180N10T
IXTP180N10T
Fig. 19. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_180N10T(61) 2-02-07-B

6 Page



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部品番号部品説明メーカ
IXTP180N10T

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation


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