PDF IXTA180N10T Data sheet ( Hoja de datos )

Número de pieza	IXTA180N10T
Descripción	Power MOSFET ( Transistor )
Fabricantes	IXYS Corporation
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No Preview Available ! TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 Maximum Ratings 100 100 V V ± 30 V 180 A 75 A 450 A 25 A 750 mJ 480 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in 2.5 g 3.0 g Characteristic Values Min. Typ. Max. 100 V 2.5 4.5 V ± 100 nA 5 μA 100 μA 5.7 6.4 mΩ G S TO-220 (IXTP) (TAB) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain Features z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - 42V Power Bus - ABS Systems z DC/DC Converters and Off-line UPS z Primary Switch for 24V and 48V Systems z Distributed Power Architechtures and VRMs z Electronic Valve Train Systems z High Current Switching Applications z High Voltage Synchronous Recifier © 2008 IXYS CORPORATION, All rights reserved DS99651A(3/08) 1 page 70 65 60 55 50 45 40 35 30 25 20 15 10 25 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature RG = 3.3Ω VGS = 10V VDS = 50V I D = 50A I D = 25A 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 180 160 t r td(on) - - - - TJ = 125ºC, VGS = 10V 140 VDS = 50V I D = 50A 120 75 70 65 60 100 55 80 50 I D = 25A 60 45 40 40 20 35 0 30 4 6 8 10 12 14 16 18 20 RG - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 38 64 37 36 35 t f td(off) - - - - RG = 3.3Ω, VGS = 10V 34 VDS = 50V 33 TJ = 125ºC 61 58 55 52 49 32 46 31 TJ = 25ºC 43 30 40 25 30 35 40 45 50 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved IXTA180N10T IXTP180N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 70 65 60 TJ = 25ºC 55 50 45 RG = 3.3Ω 40 VGS = 10V 35 VDS = 50V 30 25 TJ = 125ºC 20 15 10 24 26 28 30 32 34 36 38 40 42 44 46 48 50 ID - Amperes Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 38 t f td(off) - - - - 37 RG = 3.3Ω, VGS = 10V 36 VDS = 50V 25A < I D < 50A 64 61 58 35 55 34 52 33 49 32 46 31 I D = 25A, 50A 43 30 40 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 160 t f td(off) - - - - 140 TJ = 125ºC, VGS = 10V 120 VDS = 50V 250 220 190 100 160 25A < I D < 50A 80 I D = 25A, 50A 130 60 100 40 70 20 40 2 4 6 8 10 12 14 16 18 20 RG - Ohms 5 Page

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