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PDF IXTA160N10T Data sheet ( Hoja de datos )
| Número de pieza | IXTA160N10T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA160N10T
IXTP160N10T
VDSS =
ID25 =
RDS(on) ≤
100
160
7.0
V
A
mΩ
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
100
100
± 30
160
75
430
25
500
V
V
V
A
A
A
A
mJ
3 V/ns
430
-55 ... +175
175
-55 ... +175
W
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
3g
2.5 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
± 200 nA
5 μA
250 μA
6.1 7.0 mΩ
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
© 2006 IXYS CORPORATION All rights reserved
DS99650 (11/06)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
90
RG = 5Ω
80 VGS = 10V
VDS = 50V
70
60
50 I D = 50A
40
I D = 25A
30
20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistiv e Turn-on
Switching Times vs. Gate Resistance
170 65
t r td(on) - - - -
150 TJ = 125ºC, VGS = 10V
VDS = 50V
130
I D = 50A
60
55
110 50
I D = 25A
90 45
70 40
50 35
30 30
4 6 8 10 12 14 16 18 20
RG - Ohms
44
43
42
41
40
39
38
25
Fig. 17. Resistiv e Turn-off
Switching Times vs. Drain Current
TJ = 125ºC
t f td(off) - - - -
RG = 5Ω, VGS = 10V
VDS = 50V
80
77
74
71
68
TJ = 25ºC
65
62
TJ = 125ºC
59
56
53
TJ = 25ºC
50
47
44
30 35 40 45 50
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTA160N10T
IXTP160N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
65
60
RG = 5Ω
55 VGS = 10V
50 VDS = 50V
TJ = 25ºC
45
40
TJ = 125ºC
35
30
25 30 35 40 45 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
90 120
85
t f td(off) - - - -
115
80
75 I D = 25A
RG = 5Ω, VGS = 10V
VDS = 50V
110
105
70 100
65 I D = 50A
60
95
90
55 85
50 I D = 25A
45
80
75
40 70
35
30
25
I D = 50A
35 45 55 65 75 85 95
TJ - Degrees Centigrade
65
60
105 115 125
Fig. 18. Resistive Turn-off
Switching Times v s. Gate Resistance
140 205
130 t f
td(off) - - - -
190
120 TJ = 125ºC, VGS = 10V
VDS = 50V
110
I D = 25A
175
160
100 145
90 I D = 50A 130
80 115
70 100
60 85
50 70
40 55
30 40
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF:T_160N10T (5V) 6-15-06.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTA160N10T.PDF ] | |
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