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PDF IXTQ130N10T Data sheet ( Hoja de datos )
| Número de pieza | IXTQ130N10T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH130N10T
IXTQ130N10T
VDSS =
ID25 =
RDS(on) ≤
100V
130A
9.1mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)(TO-3P)
TO-247
TO-3P
Maximum Ratings
100
100
V
V
± 20 V
130 A
75 A
300 A
65 A
500 mJ
360 W
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
°C
°C
°C
°C
°C
Nm/lb.in.
6.0 g
5.5 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
±200 nA
5 μA
250 μA
9.1 mΩ
G
DS
TO-3P (IXTQ)
(TAB)
G
DS
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z Ultra-low On Resistance
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z 175 °C Operating Temperature
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
z DC/DC Converters and Off-line UPS
z Primary- Side Switch
z High Current Switching
Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99708A(07/08)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
65
60 RG = 5Ω
VGS = 10V
55 VDS = 50V
50
45
40
I D = 50A
35
30 I D = 25A
25
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
130
120 t r
td(on) - - - -
110 TJ = 125ºC, VGS = 10V
100
VDS = 50V
90 I D = 50A
80
70
60
I D = 25A
53
50
47
44
41
38
35
32
50 29
40 26
30 23
20 20
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
40
38
36
34 t f
td(off) - - - -
RG = 5Ω, VGS = 10V
32 VDS = 50V
30
TJ = 125ºC
28 TJ = 25ºC
26
24
25
30 35 40
ID - Amperes
45
70
66
62
58
54
50
46
42
38
50
IXTH130N10T
IXTQ130N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
62
58 RG = 5Ω
VGS = 10V
54 VDS = 50V
50
46
TJ = 25ºC
42
38
34
30 TJ = 125ºC
26
22
25
30 35 40
ID - Amperes
45
50
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
40
t f td(off) - - - -
38 RG = 5Ω, VGS = 10V
VDS = 50V
36
34
I D = 25A
68
64
60
56
32
30 I D = 50A
52
48
28 44
26 40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
100
90 t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
80 VDS = 50V
25A < I D < 50A
170
150
130
70
I D = 25A
60
110
90
50
I D = 50A
70
40 50
30 30
4 6 8 10 12 14 16 18 20
RG - Ohms
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_130N10T(V3)07-29-08-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTQ130N10T.PDF ] | |
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