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PDF IXTA80N10T7 Data sheet ( Hoja de datos )

Número de pieza IXTA80N10T7
Descripción Power MOSFET ( Transistor )
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXTA80N10T7 Hoja de datos, Descripción, Manual

Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA80N10T7
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
100
80
14
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS
TJ 175°C, RG = 15 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
100 V
100 V
± 30
80
220
25
400
3
V
A
A
A
mJ
V/ns
1
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
230
-55 ... +175
175
-55 ... +175
300
260
3
W
°C Features
°C Ultra-low On Resistance
°C Unclamped Inductive Switching (UIS)
rated
°C Low package inductance
°C - easy to drive and to protect
g 175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 100 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
± 200 nA
11.5
5 μA
150 μA
14 mΩ
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
© 2006 IXYS CORPORATION All rights reserved
DS99706 (11/06)

1 page




IXTA80N10T7 pdf
IXTA80N10T7
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
70
RG = 15Ω
65 VGS = 10V
VDS = 50V
60
55
I D = 30A
50
45
I D = 10A
40
35
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
260
240
220
200
180
160
140
120
100
80
60
40
20
0
15
Fig. 15. Resistiv e Turn-on
Switching Times vs. Gate Resistance
95
t r td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 30A
90
85
80
75
70
65
I D = 10A
60
55
50
45
40
35
30
20 25 30 35 40 45 50 55
RG - Ohms
50
49
48
47
46
45
44
43
42
41
40
39
38
10
Fig. 17. Resistiv e Turn-off
Switching Times v s. Drain Current
t f td(off) - - - -
RG = 15Ω, VGS = 10V
VDS = 50V
TJ = 125ºC
TJ = 25ºC
12 14 16 18 20 22 24 26 28
ID - Amperes
78
74
70
66
62
58
54
50
46
42
38
34
30
30
© 2006 IXYS CORPORATION All rights reserved
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
RG = 15Ω
65 VGS = 10V
VDS = 50V
TJ = 25ºC
60
55
50
45
TJ = 125ºC
40
35
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
49 76
48
47 t f
td(off) - - - -
46 RG =15Ω, VGS = 10V
VDS = 50V
45
I D = 10A
72
68
64
60
44 56
43 I D = 30A
42
52
48
41 44
40 40
39 36
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times v s. Gate Resistance
160 270
150 t f
td(off) - - - -
250
140 TJ = 125ºC, VGS = 10V
130 VDS = 50V
230
210
120 190
110
I D = 10A
100
170
150
90 130
80 110
70 90
60 I D = 30A
50
70
50
40 30
15 20 25 30 35 40 45 50 55
RG - Ohms
IXYS REF: T_80N10T (3V) 6-21-06.xls

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