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IXTP44N10TのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IXTP44N10T |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXTP44N10Tダウンロード(pdfファイル)リンクがあります。 Total 6 pages
TrenchTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTY44N10T
IXTP44N10T
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
Lead Current Limit, (RMS) (TO-252)
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220)
TO-252
TO-220
Maximum Ratings
100
100
V
V
±20 V
±30 V
44 A
25 A
110 A
10 A
250 mJ
12 V/ns
130 W
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
0.35
3.00
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 25μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
±100 nA
1 μA
200 μA
30 mΩ
VDSS = 100V
ID25 = 44A
RDS(on) ≤ 30mΩ
TO-252 (IXTY)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z Avalanche Rated
z Low RDS(on)
z High Current Handling Capability
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Automotive
- Motor Drives
- 24 / 48V Power Bus
- ABS Systems
z DC/DC Converters and Off-Line UPS
z Primary- Side Switch
z High Current Switching Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99646A(2/10)
1 Page IXTY44N10T
IXTP44N10T
45
40
35
30
25
20
15
10
5
0
0.0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
9V
8V
7V
6V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS - Volts
1.6
45
40
35
30
25
20
15
10
5
0
0.0
Fig. 3. Output Characteristics @ TJ = 150ºC
VGS = 10V
9V
8V
7V
6V
5V
0.4 0.8 1.2 1.6 2.0 2.4 2.8
VDS - Volts
3.2
4.2
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.
Drain Current
VGS = 10V
15V - - - -
TJ = 175ºC
TJ = 25ºC
10 20 30 40 50 60 70 80 90 100 110
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
120
VGS = 10V
100
9V
80
8V
60
40
7V
20
6V
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.
Junction Temperature
3.4
3.0 VGS = 10V
2.6
2.2 I D = 44A
1.8 I D = 22A
1.4
1.0
0.6
0.2
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
175
50
45
40
35
30
25
20
15
10
5
0
-50
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit for TO-252
-25 0
25 50 75 100 125 150 175
TC - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
3Pages IXTY44N10T
IXTP44N10T
Fig. 12. Maximum Transient Thermal Impedance
10.00
Fig. 19. Maximum Transient Thermal Impedance
2.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:T_44N10T(1V)02-08-10-B
6 Page | |||
ページ | 合計 : 6 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXTP44N10T | Power MOSFET ( Transistor ) | IXYS Corporation |