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IXTV230N085T PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTV230N085T
部品説明 Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTV230N085T Datasheet, IXTV230N085T PDF,ピン配置, 機能
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTV230N085T
IXTV230N085TS
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
85
230
4.4
V
A
m
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 175° C, RG = 3.3
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS220)
Maximum Ratings
85 V
85 V
PLUS220 (IXTV)
± 20
230
75
520
V
A
G DS
A PLUS220SMD (IXTV_S)
A
D (TAB)
40 A
1.0 J
3
550
-55 ... +175
175
-55 ... +175
300
260
11...65 /2.5...15
3
V/ns
W
°C
°C
°C
°C
°C
N/lb.
g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
3.7 4.4 m
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99705(11/06)

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