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IXTA200N085T7 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTA200N085T7
部品説明 Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTA200N085T7 Datasheet, IXTA200N085T7 PDF,ピン配置, 機能
Preliminary Technical Information
TrenchMVTM
IXTA200N085T7
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
85
200
5.0
V
A
mΩ
Symbol
Test Conditions
Maximum Ratings TO-263 (7-lead) (IXTA..7)
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Limited, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS
TJ 175°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
85 V
85 V
± 20 V 1
200 A
120 A
7
540 A Pin-out:1 - Gate
(TAB)
25 A
1.0 mJ
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
3 V/ns
TAB (8) - Drain
480
-55 ... +175
175
-55 ... +175
300
260
3
W
°C Features
°C Ultra-low On Resistance
°C Unclamped Inductive Switching (UIS)
°C
°C
rated
Low package inductance
- easy to drive and to protect
g 175 °C Operating Temperature
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
4.0 5.0 mΩ
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
Downloaded from Elcodis.com electronic components distributor
DS99702 (11/06)

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