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PDF IXTP180N085T Data sheet ( Hoja de datos )
| Número de pieza | IXTP180N085T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA180N085T
IXTP180N085T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
85
180
5.5
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 5 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Maximum Ratings
85 V
85 V
± 20
180
75
480
25
1.0
V
A
A
A
A
J
3 V/ns
430 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
2.5 g
3.0 g
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
4.5 5.5 m Ω
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99642 (11/06)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
80
RG = 5Ω
70 VGS = 10V
VDS = 43V
60
50
40 I D = 50A
30 I D = 25A
20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
140 60
t r td(on) - - - -
120 TJ = 125ºC, VGS = 10V
56
VDS = 43V
100
I D = 50A
52
80 48
I D = 25A
60 44
40 40
20 36
0
4
72
68
32
6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
TJ = 125ºC
100
92
64
t f td(off) - - - -
60 RG = 5Ω, VGS = 10V
VDS = 43V
56
52
TJ = 25ºC
TJ = 25ºC
84
76
68
60
48 52
TJ = 125ºC
44 44
24 28 32 36 40 44 48
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTA180N085T
IXTP180N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
90
80 TJ = 25ºC
70
RG = 5Ω
60 VGS = 10V
VDS = 43V
50
40
30 TJ = 125ºC
20
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
68
66 I D = 50A
94
90
64
I D = 25A
62
60 t f
td(off) - - - -
58 RG = 5Ω, VGS = 10V
VDS = 43V
56
86
82
78
74
70
54 66
52
I D = 25A, 50A
50
62
58
48 54
46 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
160
tf
td(off) - - - -
140 TJ = 125ºC, VGS = 10V
VDS = 43V
I D = 25A
120
300
260
220
I D = 50A
100 180
80 140
60 100
40 60
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_180N085T (5V) 6-13-06.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTP180N085T.PDF ] | |
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