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PDF IXTA88N085T Data sheet ( Hoja de datos )
| Número de pieza | IXTA88N085T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA88N085T
IXTP88N085T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
85 V
88 A
11 m Ω
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 5 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
85 V
85 V
± 20
88
75
240
25
500
V
A
A
A
A
mJ
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
3 V/ns
230 W
-55 ... +175
175
-40 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
3g
2.5 g
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 100 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
2 µA
150 µA
9 11 m Ω
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99640 (11/06)
1 page  
70
65
60
55
50
45
40
35
30
25
20
15
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 5Ω
VGS = 10V
VDS = 44V
I D = 40A
I D = 20A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
120 41
110 t r
td(on) - - - -
100
TJ = 125ºC, VGS = 10V
I D = 40A, 20A
90 VDS = 44V
39
37
35
80 33
70 31
60 29
50 27
40 25
30 23
20 21
10 19
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
33 58
t f td(off) - - - -
32
RG = 5Ω, VGS = 10V
54
TJ = 125ºC
VDS = 44V
31 50
30 46
29
28 TJ = 25ºC
42
38
27 34
20 22 24 26 28 30 32 34 36 38 40
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTA88N085T
IXTP88N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
65
60 TJ = 25ºC
55
50
45 RG = 5Ω
VGS = 10V
40 VDS = 44V
35
30
25 TJ = 125ºC
20
15
20 22 24 26 28 30 32 34 36 38 40
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
33 52
32 49
I D = 20A
31 46
I D = 40A
30 43
29 40
t f td(off) - - - -
28
RG = 5Ω, VGS = 10V
37
VDS = 44V
27 34
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
130 220
120 t f
td(off) - - - -
110 TJ = 125ºC, VGS = 10V
100 VDS = 44V
I D = 20A
200
180
160
90 140
80 120
70 100
I D = 40A
60 80
50 60
40 40
30 20
20 0
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33
RG - Ohms
IXYS REF: T_88N085T (3V) 9-15-06-A.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTA88N085T.PDF ] | |
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