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PDF IXTP50N085T Data sheet ( Hoja de datos )
| Número de pieza | IXTP50N085T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTP50N085T
IXTY50N085T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
85 V
50 A
23 mΩ
TO-220 (IXTP)
GD S
D (TAB)
Symbol
VDSS
VDGR
VGSM
ID25
IL
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Package Current Limit, RMS
TO-252
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 18 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
85
85
± 20
50
25
130
10
250
3
V
V
V
A
A
A
A
mJ
V/ns
130 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
TO-220
TO-252
3g
0.35 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 25 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 100 nA
1 μA
100 μA
23 mΩ
TO-252 (IXTY)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99638 (11/06)
1 page  
46
44
42
40
38
36
34
32
30
28
26
24
22
20
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 18Ω
VGS = 10V
VDS = 42.5V
I D = 30A
I D = 10A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistiv e Turn-on
Switching Times vs. Gate Resistance
90 32
t r td(on) - - - -
80 TJ = 125ºC, VGS = 10V
30
70 VDS = 42.5V
28
60
I D = 30A
26
50 24
I D = 10A
40 22
30 20
20 18
10 16
15 20 25 30 35 40 45 50 55 60
RG - Ohms
Fig. 17. Resistiv e Turn-off
Switching Times v s. Drain Current
34
56
t f td(off) - - - -
33
RG = 18Ω, VGS = 10V
52
VDS = 42.5V
32 48
TJ = 125ºC
31 44
30
TJ = 25ºC
29
40
36
28 32
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTP50N085T
IXTY50N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
46
44 RG = 18Ω
42 VGS = 10V
40 VDS = 42.5V
38
TJ = 25ºC
36
34
32
30
28
26
24 TJ = 125ºC
22
20
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
34 54
33 t f
td(off) - - - -
RG = 18Ω, VGS = 10V
32 VDS = 42.5V
I D = 10A
50
46
31 42
30 38
I D = 30A
29 34
28 30
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times v s. Gate Resistance
90 150
85 t f
td(off) - - - -
80 TJ = 125ºC, VGS = 10V
75 VDS = 42.5V
140
130
120
70 110
65 100
60 90
55
I D = 10A
50
80
70
45 60
40
I D = 30A
50
35 40
30 30
25 20
15 20 25 30 35 40 45 50 55 60
RG - Ohms
IXYS REF: T_50N085T (1V) 7-13-06.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTP50N085T.PDF ] | |
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