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PDF IXTV250N075T Data sheet ( Hoja de datos )
| Número de pieza | IXTV250N075T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTV250N075T
IXTV250N075TS
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
75
250
4.0
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 3.3 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS220)
Maximum Ratings
75
75
± 20
250
75
560
40
1.5
V
V
V
A
A
A
A
J
3 V/ns
550
-55 ... +175
175
-55 ... +175
300
260
11...65 /2.5...15
3
W
°C
°C
°C
°C
°C
N/lb.
g
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
25 µA
250 µA
3.3 4.0 m Ω
PLUS220 (IXTV)
G DS
PLUS220SMD (IXTV_S)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99696(11/06)
1 page  
53
50
47
44
41
38
35
32
29
26
23
20
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 3.3Ω
VGS = 10V
VDS = 37.5V
I D = 50A
I D = 25A
35 45 55 65 75 85 95 105 115
TJ - Degrees Centigrade
125
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
200
180 t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
160 VDS = 37.5V
I D = 50A, 25A
85
80
75
140 70
120 65
100 60
80 55
60 50
40 45
20 40
0 35
2 4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
56
54 t f
td(off) - - - -
RG = 3.3Ω, VGS = 10V
52 VDS = 37.5V
100
95
90
50 85
48 80
46 75
44 70
TJ = 25ºC, 125ºC
42 65
40 60
38 55
36 50
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTV250N075T
IXTV250N075TS
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
55
50
TJ = 25ºC
45
40 RG = 3.3Ω
VGS = 10V
35 VDS = 37.5V
30
25
TJ = 125ºC
20
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
53 102
52 t f
td(off) - - - -
51 RG = 3.3Ω, VGS = 10V
50 VDS = 37.5V
49
98
94
90
86
48 82
47
I D = 25A
78
46 74
45 70
44 I D = 50A
43
66
62
42 58
41 54
40 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
240 390
220 t f
td(off) - - - -
200 TJ = 125ºC, VGS = 10V
VDS = 37.5V
180 I D = 25A
360
330
300
160 270
140 240
I D = 50A
120 210
100 180
80 150
60 120
40 90
20 60
2 4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_250N075T (6V) 8-31-08-A.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTV250N075T.PDF ] | |
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