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IXTC250N075TのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IXTC250N075T |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXTC250N075Tダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Preliminary Technical Information
TrenchMVTM
IXTC250N075T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
V=
DSS
ID25 =
RDS(on) ≤
75
128
4.4
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
I
LRMS
IDM
IAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
T
SOLD
V
ISOL
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
Maximum Ratings
75 V
75 V
± 20
V
TC = 25°C
Package Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
128 A
75 A
600 A
25 A
1.0 J
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
T
J
≤
175°C,
R
G
=
3.3
Ω
T
C
= 25°C
3 V/ns
160
-55 ... +175
175
-55 ... +175
W
°C
°C
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I < 1 mA, RMS
ISOL
300
260
2500
°C
°C
V
Mounting force
11..65/2.5..15
N/lb.
2g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
I
GSS
V
GS
=
±
20
V,
V
DS
=
0
V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
R
DS(on)
V = 10 V, I = 25 A, Notes 1, 2
GS D
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
4.4 m Ω
ISOPLUS220 (IXTC)
E153432
G
DS
G = Gate
S = Source
Isolated back surface
D = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2007 IXYS CORPORATION All rights reserved
DS99655 (02/07)
1 Page IXTC250N075T
250
225
200
175
150
125
100
75
50
25
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
5V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VDS - Volts
1
250
225
200
175
150
125
100
75
50
25
0
0
Fig. 3. Output Characteristics
@ 150ºC
VGS = 10V
9V
8V
7V
6V
5V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS - Volts
2
Fig. 5. RDS(on) Normalized to ID = 125A Value
vs. Drain Current
2.6
2.4 TJ = 175ºC
2.2
2
VGS = 10V
1.8 15V - - - -
1.6
1.4
1.2
TJ = 25ºC
1
0.8
0
50 100 150 200 250 300 350
ID - Amperes
© 2007 IXYS CORPORATION All rights reserved
Fig. 2. Extended Output Characteristics
@ 25ºC
350
VGS = 10V
300
9V
8V
250
7V
200
150 6V
100
50 5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 125A Value
vs. Junction Temperature
2.4
2.2 VGS = 10V
2.0
1.8
I D = 250A
1.6
I D = 125A
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
90
80 External Lead Current Limit
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXTC250N075T | Power MOSFET ( Transistor ) | IXYS Corporation |