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IXTH220N075TのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IXTH220N075T |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXTH220N075Tダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Preliminary Technical Information
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH220N075T
IXTQ220N075T
VDSS =
ID25 =
RDS(on) ≤
75
220
4.5
V
A
mΩ
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 3.3 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
75
75
± 20
220
75
600
25
1.0
VG
V DS
V
A TO-3P (IXTQ)
A
A
A
J
(TAB)
3
480
-55 ... +175
175
-55 ... +175
V/ns
W
°C
°C
°C
G
D
S
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
300 °C
260 °C
1.13 / 10 Nm/lb.in.
5.5 g
6g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
3.6 4.5 mΩ
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99635 (11/06)
1 Page Fig. 1. Output Characteristics
@ 25ºC
220
200
VGS = 10V
8V
180 7V
160
140
120
100 6V
80
60
40 5V
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VDS - Volts
220
200
180
160
140
120
100
80
60
40
20
0
0
Fig. 3. Output Characteristics
@ 150ºC
VGS = 10V
8V
7V
6V
5V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS - Volts
2
Fig. 5. RDS(on) Normalized to ID = 110A Value
vs. Drain Current
2.6
2.4
2.2
2
1.8
VGS = 10V
15V - - - - -
1.6
TJ = 175ºC
1.4
1.2
1
0.8 TJ = 25ºC
0.6
0
30 60 90 120 150 180 210 240 270 300
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTH220N075T
IXTQ220N075T
Fig. 2. Extended Output Characteristics
@ 25ºC
300
VGS = 10V
270 8V
240 7V
210
180
150
120 6V
90
60
30 5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VDS - Volts
4.5
Fig. 4. RDS(on) Normalized to ID = 110A Value
vs. Junction Temperature
2.4
2.2 VGS = 10V
2
1.8
1.6 I D = 220A
1.4
I D = 110A
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
140
External Lead Current Limit for TO-263 (7-Lead)
120
100
80
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
40
20
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXTH220N075T | Power MOSFET ( Transistor ) | IXYS Corporation |