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PDF IXTP220N075T Data sheet ( Hoja de datos )
| Número de pieza | IXTP220N075T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA220N075T
IXTP220N075T
VDSS =
ID25 =
RDS(on) ≤
75
220
4.5
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 3.3 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
75 V
75 V
± 20 V
220 A
75 A
600 A
25 A
1.0 J
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
3 V/ns
480
-55 ... +175
175
-55 ... +175
W
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
3g
2.5 g
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Collector
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
3.9 4.5 mΩ
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99611 (11/06)
1 page  
70
65
60
55
50
45
40
35
30
25
20
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 3.3Ω
VGS = 10V
VDS = 37.5V
I D = 50A
I D = 25A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
75 220
70 t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
65 VDS = 37.5V
200
180
60 160
55
I D = 50A
50
45
ID = 25A
140
120
100
40 80
35 60
30 40
25 20
2 4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
49 95
t f td(off) - - - -
RG = 3.3Ω, VGS = 10V
90
48
VDS = 37.5V
85
80
47
TJ = 125ºC
75
70
46 65
60
45
TJ = 25ºC
55
50
44 45
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTA220N075T
IXTP220N075T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
75
70
65 TJ = 25ºC
60
55 RG = 3.3Ω
50 VGS = 10V
VDS = 37.5V
45
40
35
TJ = 125ºC
30
25
20
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
48.5
48.0
47.5
t f td(off) - - - -
RG = 3.3Ω, VGS = 10V
VDS = 37.5V
84
80
76
47.0
46.5
I D = 25A
72
68
46.0
64
45.5
I D = 50A
60
45.0
56
44.5
52
44.0
48
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
210
t f td(off) - - - -
190
TJ = 125ºC, VGS = 10V
170 VDS = 37.5V
150
I D = 25A
340
310
280
250
130 220
I D = 50A
110 190
90 160
70 130
50 100
30 70
2 4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_220N075T (61) 11-20-06-B.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTP220N075T.PDF ] | |
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