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PDF IXTH200N075T Data sheet ( Hoja de datos )
| Número de pieza | IXTH200N075T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
Trench Gate
Power MOSFET
IXTH200N075T
IXTQ200N075T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
75
200
5.0
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Maximum Ratings
75
75
± 20
200
75
540
25
750
V
V
V
A
A
A
A
mJ
3 V/ns
430 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
5.5 g
6g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
4.0 5.0 mΩ
TO-247 (IXTH)
G
DS
TO-3P (IXTQ)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2006 IXYS CORPORATION All rights reserved
DS99634 (11/06)
1 page  
Fig. 13. Resistiv e Turn-on
Rise Time vs. Junction Temperature
65
60 RG = 5Ω
VGS = 10V
55 VDS = 38V
50
45
40
35
I D = 50A
30
25 I D = 25A
20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistiv e Turn-on
Switching Times vs. Gate Resistance
130 60
120 t r
td(on) - - - -
57
110 TJ = 125ºC, VGS = 10V
VDS = 38V
100
54
51
90 48
80 45
70
60 I D = 50A
42
39
50 36
40
I D = 25A
33
30 30
20 27
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistiv e Turn-off
Switching Times v s. Drain Current
58
57
56
55 t f
td(off) - - - -
RG = 5Ω, VGS = 10V
54 VDS = 38V
53
TJ = 125ºC
52
51
50 TJ = 25ºC
49
48
25
30 35 40
ID - Amperes
45
© 2006 IXYS CORPORATION All rights reserved
95
90
85
80
75
70
65
60
55
50
45
50
IXTH200N075T
IXTQ200N075T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
65
60
55
RG = 5Ω
50 VGS = 10V
45 VDS = 38V
TJ = 25ºC
40
35
30 TJ = 125ºC
25
20
25
30 35 40
ID - Amperes
45
50
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
58 95
57 90
56
I D = 25A
85
55 80
54 75
53 70
I D = 50A
52 65
51 60
50
tf
td(off) - - - -
55
RG = 5Ω, VGS = 10V
49
VDS = 38V
50
48 45
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times v s. Gate Resistance
170 300
t f td(off) - - - -
150 TJ = 125ºC, VGS = 10V
VDS = 38V
260
130
I D = 25A
220
110 180
90 140
I D = 50A
70 100
50 60
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_200N075T (5V) 6-20-06.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTH200N075T.PDF ] | |
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