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PDF IXTA200N075T7 Data sheet ( Hoja de datos )
| Número de pieza | IXTA200N075T7 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Preliminary Technical Information
TrenchMVTM
IXTA200N075T7
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
75
200
5.0
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Package Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 5 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
75 V
75 V
± 20
200
120
540
25
500
3
V
A
A
A
A
mJ
V/ns
1
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
430
-55 ... +175
175
-55 ... +175
300
260
3
Features
W Ultra-low On Resistance
°C
°C
°C
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
°C 175 ° C Operating Temperature
°C
Advantages
g Easy to mount
Space savings
High power density
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
4.0 5.0 m Ω
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99691 (11/06)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
65
60 RG = 5Ω
VGS = 10V
55 VDS = 38V
50
45
40
35 I D = 50A
30
25 I D = 25A
20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
130
120
110
100
90
80
70
60
50
40
30
20
4
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
t r td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 38V
60
57
54
51
48
45
I D = 50A
42
39
I D = 25A
36
33
30
27
6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
58
57
56
55 t f
td(off) - - - -
RG = 5Ω, VGS = 10V
54 VDS = 38V
53
TJ = 125ºC
52
51
50 TJ = 25ºC
49
48
25
30 35 40
ID - Amperes
45
95
90
85
80
75
70
65
60
55
50
45
50
© 2006 IXYS CORPORATION All rights reserved
IXTA200N075T7
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
65
60
55
RG = 5Ω
50 VGS = 10V
45 VDS = 38V
TJ = 25ºC
40
35
30 TJ = 125ºC
25
20
25
30 35 40
ID - Amperes
45
50
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
58 95
57 90
56
I D = 25A
85
55 80
54 75
53 70
I D = 50A
52 65
51 60
50
tf
td(off) - - - -
55
RG = 5Ω, VGS = 10V
49
VDS = 38V
50
48 45
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
170 300
t f td(off) - - - -
150 TJ = 125ºC, VGS = 10V
VDS = 38V
260
130
I D = 25A
220
110 180
90 140
I D = 50A
70 100
50 60
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_200N075T (5V) 6-20-06.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTA200N075T7.PDF ] | |
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