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PDF IXTQ160N075T Data sheet ( Hoja de datos )
| Número de pieza | IXTQ160N075T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH160N075T
IXTQ160N075T
VDSS =
ID25 =
RDS(on) ≤
75
160
6.0
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS
TJ ≤ 175°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-3P, TO-220)
TO-3P
TO-247
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
© 2006 IXYS CORPORATION All rights reserved
Maximum Ratings
75
75
± 20
160
75
430
25
750
V
V
V
A
A
A
A
mJ
3 V/ns
360
-55 ... +175
175
-55 ... +175
W
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
5.5 g
6g
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
4.8 6.0 mΩ
TO-247 (IXTH)
G
DS
TO-3P (IXTQ)
D (TAB)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
DS99690 (11/06)
1 page  
75
70
65
60
55
50
45
40
35
30
25
20
15
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 5Ω
VGS = 10V
VDS = 38V
I D = 50A
I D = 25A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
100 42
90 t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
80 VDS = 38V
I D = 25A
70
40
38
36
60 34
I D = 50A
50 32
40 30
30 28
20 26
10 24
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
62
60 T J = 125ºC
58
56 t f
td(off) - - - -
54 RG = 5Ω, VGS = 10V
VDS = 38V
52
T J = 25ºC
50
48
T J = 25ºC
46
44
42
25
T J = 125ºC
30 35 40
I D - Amperes
45
90
86
82
78
74
70
66
62
58
54
50
50
© 2006 IXYS CORPORATION All rights reserved
IXTH160N075T
IXTQ160N075T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
80
70
60 RG = 5Ω
VGS = 10V
50 VDS = 38V
40
TJ = 25ºC
30
TJ = 125ºC
20
10
25 30 35 40 45 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
62 85
60 82
58 t f
td(off) - - - -
56 RG = 5Ω, VGS = 10V
54 VDS = 38V
52
I D = 25A
79
76
73
70
50 67
I D = 50A
48 64
46 61
44 58
42 55
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
130
120 t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
110 VDS = 38V
100
I D = 25A
90
80 I D = 50A
230
210
190
170
150
130
70 110
60 90
50 70
40 50
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_160N075T (4V) 6-16-06.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTQ160N075T.PDF ] | |
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