PDF IXTP55N075T Data sheet ( Hoja de datos )

Número de pieza	IXTP55N075T
Descripción	Power MOSFET ( Transistor )
Fabricantes	IXYS Corporation
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No Preview Available ! Preliminary Technical Information TrenchMVTM Power MOSFET IXTP55N075T IXTY55N075T N-Channel Enhancement Mode Avalanche Rated VDSS = 75 ID25 = 55 RDS(on) ≤ 19.5 V A mΩ TO-220 (IXTP) Symbol VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG =18 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) 75 V 75 V ± 20 V 55 A 25 A 150 A 10 A 250 mJ 3 V/ns 130 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. TO-220 TO-252 3g 0.35 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 25 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 100 nA 1 μA 100 μA 19.5 mΩ GD S TO-252 (IXTY) D (TAB) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99631 (11/06) 1 page 85 80 75 70 65 60 55 50 45 40 35 30 25 25 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature RG = 18Ω VGS = 10V VDS = 37.5V I D = 30A I D = 10A 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 150 tr td(on) - - - - 31 130 TJ = 125ºC, VGS = 10V 29 VDS = 37.5V 110 ID = 30A 27 90 25 70 I D = 10A 23 50 21 30 19 10 17 15 20 25 30 35 40 45 50 55 60 RG - Ohms 42 41 40 39 38 37 36 35 34 33 32 31 30 10 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current t f td(off) - - - - RG = 18Ω, VGS = 10V VDS = 37.5V 54 52 50 48 46 44 TJ = 125ºC 42 40 38 36 34 TJ = 25ºC 32 30 12 14 16 18 20 22 24 26 28 30 ID - Amperes © 2006 IXYS CORPORATION All rights reserved IXTP 55N075T IXTY 55N075T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 85 80 RG = 18Ω 75 VGS = 10V 70 VDS = 37.5V TJ = 25ºC 65 60 55 50 45 40 35 TJ = 125ºC 30 25 10 12 14 16 18 20 22 24 26 28 30 ID - Amperes Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 42 54 40 t f td(off) - - - - RG = 18Ω, VGS = 10V 38 VDS = 37.5V I D = 10A 50 46 36 42 34 38 ID = 30A 32 34 30 30 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade 95 90 85 80 75 70 65 60 55 50 45 40 35 30 15 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance I D = 10A I D = 30A t f td(off) - - - - TJ = 125ºC, VGS = 10V VDS = 37.5V 20 25 30 35 40 45 50 55 RG - Ohms 130 120 110 100 90 80 70 60 50 40 30 20 10 0 60 IXYS REF: T_55N075T (1V) 7-13-06.xls 5 Page

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