PDF IXTP90N055T Data sheet ( Hoja de datos )

Número de pieza	IXTP90N055T
Descripción	Power MOSFET ( Transistor )
Fabricantes	IXYS Corporation
Logotipo
Hay una vista previa y un enlace de descarga de IXTP90N055T (archivo pdf) en la parte inferior de esta página. Total 5 Páginas
No Preview Available ! Preliminary Technical Information TrenchMVTM Power MOSFET IXTA90N055T IXTP90N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 V 90 A 8.8 m Ω Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 10 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 55 V 55 V ± 20 90 75 240 25 400 V A A A A mJ TO-263 (IXTA) G S TO-220 (IXTP) (TAB) 3 V/ns 176 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 3g 2.5 g GD S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 50 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25 A, Note 1 Characteristic Values Min. Typ. Max. 55 V 2.0 4.0 V ± 200 nA 1 µA 250 µA 6.6 8.8 m Ω Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99624 (11/06) 1 page 36 34 32 30 28 26 24 22 20 18 25 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature RG = 10Ω VGS = 10V VDS = 27.5V I D = 30A I D = 10A 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 90 t r td(on) - - - - 80 TJ = 125ºC, VGS = 10V VDS = 27.5V 70 I D = 30A 34 32 30 60 28 I D = 10A 50 26 40 24 30 22 20 20 10 18 10 12 14 16 18 20 22 24 26 28 30 32 34 RG - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 38 70 36 34 TJ = 125ºC 66 62 32 58 30 28 t f td(off) - - - - 26 RG = 10Ω, VGS = 10V VDS = 27.5V 24 54 50 46 42 22 TJ = 25ºC 20 38 34 18 30 10 12 14 16 18 20 22 24 26 28 30 ID - Amperes © 2006 IXYS CORPORATION All rights reserved IXTA90N055T IXTP90N055T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 38 36 RG = 10Ω 34 VGS = 10V VDS = 27.5V 32 TJ = 25ºC 30 28 26 24 22 TJ = 125ºC 20 18 10 12 14 16 18 20 22 24 26 28 30 ID - Amperes Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 42 68 40 t f td(off) - - - - 38 RG = 10Ω, VGS = 10V VDS = 27.5V 36 34 I D = 10A 65 62 59 56 32 53 30 50 28 26 I D = 30A 47 44 24 41 22 38 20 35 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 110 tf td(off) - - - - 180 100 TJ = 125ºC, VGS = 10V 160 VDS = 27.5V 90 140 80 120 70 I D = 10A 60 100 80 50 40 I D = 30A 60 40 30 20 10 12 14 16 18 20 22 24 26 28 30 32 34 RG - Ohms IXYS REF: T_90N055T (2V) 7-06-06.xls 5 Page

Páginas	Total 5 Páginas
PDF Descargar	[ Datasheet IXTP90N055T.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
IXTP90N055T	Power MOSFET ( Transistor )	IXYS Corporation

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar