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IXTV280N055TSのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IXTV280N055TS |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXTV280N055TSダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTV 280N055T
IXTV 280N055TS
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
55
280
3.2
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 3.3 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS220)
Maximum Ratings
55 V
55 V
± 20 V
280 A
75 A
600 A
40 A
1.5 J
3 V/ns
550
-55 ... +175
175
-55 ... +175
300
260
11...65 /2.5...15
3
W
°C
°C
°C
°C
°C
N/lb.
g
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
2.6 3.2 m Ω
PLUS220 (IXTV)
G DS
PLUS220SMD (IXTV_S)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99687(11/06)
1 Page Fig. 1. Output Characteristics
@ 25ºC
280
VGS = 10V
9V
240 8V
200
7V
160
120 6V
80
40
0
0
5V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VDS - Volts
Fig. 3. Output Characteristics
@ 150ºC
280
VGS = 10V
9V
240 8V
200
7V
160
6V
120
80
5V
40
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 140A Value
vs. Drain Current
2.2
2 TJ = 175ºC
1.8
1.6 VGS = 10V
15V - - - -
1.4
1.2
TJ = 25ºC
1
0.8
0
50 100 150 200 250 300 350
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTV280N055T
IXTV280N055TS
Fig. 2. Extended Output Characteristics
@ 25ºC
350
VGS = 10V
300
9V
8V
250
7V
200
150 6V
100
50
5V
0
0 0.5 1 1.5 2 2.5 3 3.5
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 140A Value
vs. Junction Temperature
2.2
2.0 VGS = 10V
1.8
1.6
I D = 280A
1.4
I D = 140A
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
90
80 External Lead Current Limit
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXTV280N055T | Power MOSFET ( Transistor ) | IXYS Corporation |
IXTV280N055TS | Power MOSFET ( Transistor ) | IXYS Corporation |