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PDF IXTQ280N055T Data sheet ( Hoja de datos )
| Número de pieza | IXTQ280N055T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH280N055T
IXTQ280N055T
VDSS =
ID25 =
RDS(on) ≤
55V
280A
3.2mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)(TO-3P)
TO-247
TO-3P
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
© 2008 IXYS CORPORATION, All rights reserved
Maximum Ratings
55
55
V
V
± 20 V
280 A
75 A
600 A
40 A
1.5 J
550 W
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
°C
°C
°C
°C
°C
Nm/lb.in.
6.0 g
5.5 g
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
±200 nA
5 μA
250 μA
2.6 3.2 mΩ
G
DS
TO-3P (IXTQ)
(TAB)
G
DS
(TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
International standard packages
175°C Operating Temperature
Avalanche Rated
Low RDS(on)
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
DS99630A(07/08)
1 page  
60
55
50
45
40
35
30
25
20
15
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 3.3Ω
VGS = 10V
VDS = 27.5V
I D = 25A
I D = 50A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
200
180
160
140
120
100
80
60
40
20
0
2
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
t r td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 27.5V
I D = 50A
80
75
70
65
60
55
I D = 25A
50
45
40
35
30
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
57 90
54
51
48 t f
td(off) - - - -
RG = 3.3Ω, VGS = 10V
45 VDS = 27.5V
42
TJ = 125ºC
85
80
75
70
65
39 60
36 55
TJ = 25ºC
33 50
30 45
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
IXTH280N055T
IXTQ280N055T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
55
50
RG = 3.3Ω
45 VGS = 10V
40 VDS = 27.5V
TJ = 25ºC
35
30
25 TJ = 125ºC
20
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
57
55
53
51
49
47
45
43
41
39
37
35
25
t f td(off) - - - -
RG = 3.3Ω, VGS = 10V
VDS = 27.5V
I D = 25A
95
90
85
80
I D = 50A
75
70
65
60
55
50
45
40
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
240
220 t f
td(off) - - - -
200 TJ = 125ºC, VGS = 10V
VDS = 27.5V
180
160
140
I D = 25A
I D = 50A
120
100
80
60
40
2 4 6 8 10 12 14 16 18
RG - Ohms
370
340
310
280
250
220
190
160
130
100
70
20
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_280N055T(6V)8-05-08-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTQ280N055T.PDF ] | |
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