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PDF IXTC240N055T Data sheet ( Hoja de datos )
| Número de pieza | IXTC240N055T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
IXTC240N055T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
55
132
4.0
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IIDLM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
55
55
± 20
V
V
V
TC = 25°C
Package Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
132 A
75 A
650 A
25 A
500 mJ
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 5 Ω
TC = 25°C
3 V/ns
150
-55 ... +175
175
-55 ... +175
W
°C
°C
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS
Mounting force
ISOPLUS240
300
260
2500
11..65/2.5..15
°C
°C
V
N/lb.
2g
ISOPLUS240 (IXTC)
E153432
G
DS
G = Gate
S = Source
Isolated back surface
D = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 1 mA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 50 A, Note 1
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
4.0 mΩ
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99628(11/06)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
57
54 RG = 5Ω
VGS = 10V
51 VDS = 30V
48
45
42
39 I D = 50A
36 I D = 25A
33
30
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
180
t r td(on) - - - -
160 TJ = 125ºC, VGS = 10V
VDS = 30V
140
I D = 50A
25A
66
62
58
120 54
100 50
80
I D = 50A
60 25A
40
46
42
38
20 34
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
78
76
74
72
70 TJ = 25ºC, 125ºC
68 t f
td(off) - - - -
66 RG = 5Ω, VGS = 10V
VDS = 30V
64
62
TJ = 25ºC, 125ºC
60
58
24 28 32 36 40 44 48
ID - Amperes
100
96
92
88
84
80
76
72
68
64
60
© 2006 IXYS CORPORATION All rights reserved
IXTC240N055T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
57
54
51 RG = 5Ω
48 VGS = 10V
VDS = 30V
45
TJ = 25ºC
42
39
36 TJ = 125ºC
33
30
25
30 35 40
ID - Amperes
45
50
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
78
t f td(off) - - - -
76
RG = 5Ω, VGS = 10V
74 VDS = 30V
100
96
92
72 88
70 84
68
I D = 25A
66
80
76
64
I D = 50A
72
62 68
60 64
58 60
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
225
t f td(off) - - - -
200 TJ = 125ºC, VGS = 10V
VDS = 30V
I D = 25A
175
340
300
260
150 220
I D = 50A
125 180
100 140
75 100
50 60
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_240N055T (61) 11-16-06-B.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTC240N055T.PDF ] | |
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