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PDF IXTH220N055T Data sheet ( Hoja de datos )
| Número de pieza | IXTH220N055T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH220N055T
IXTQ220N055T
VDSS =
ID25 =
RDS(on) ≤
55
220
4.0
V
A
mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 5 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Maximum Ratings
55 V
55 V
G
DS
(TAB)
± 20
220
75
600
25
1.0
3
V
A
A
A
A
J
V/ns
TO-3P (IXTQ)
G
D
S
(TAB)
430
-55 ... +175
175
-55 ... +175
W G = Gate D = Drain
°C S = Source TAB = Drain
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
5.5 g
6g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 1 mA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
3.1 4.0 m Ω
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99684 (11/06)
1 page  
75
70
65
60
55
50
45
40
35
30
25
20
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 5Ω
VGS = 10V
VDS = 30V
I D = 50A
I D = 25A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
160 65
t r td(on) - - - -
140 TJ = 125ºC, VGS = 10V
VDS = 30V
120
60
55
100 50
80 I D = 50A, 25A
45
60 40
40 35
20 30
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
64
TJ = 125ºC
62
60
t f td(off) - - - -
58 RG = 5Ω, VGS = 10V
56 VDS = 30V
54
52
50
48 TJ = 25ºC
46
24 28 32 36 40 44 48
ID - Amperes
84
80
76
72
68
64
60
56
52
48
© 2006 IXYS CORPORATION All rights reserved
IXTH220N055T
IXTQ220N055T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
75
70
65
60
55 RG = 5Ω
VGS = 10V
50 VDS = 30V
45
TJ = 25ºC
40
35 TJ = 125ºC
30
25
25
30 35 40
ID - Amperes
45
50
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
65
I D = 25A, 50A
63
90
86
61 82
59 78
57 74
55 70
53 I D = 50A, 25A
66
51 62
49 t f td(off) - - - - 58
RG = 5Ω, VGS = 10V
47
VDS = 30V
54
45 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
190 260
t f td(off) - - - -
170 TJ = 125ºC, VGS = 10V
VDS = 30V
150
230
200
130 I D = 25A
170
110
I D = 50A
140
90 110
70 80
50 50
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_220N055T (5V) 8-29-06-A.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTH220N055T.PDF ] | |
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