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PDF IXTH182N055T Data sheet ( Hoja de datos )
| Número de pieza | IXTH182N055T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTH182N055T
IXTQ182N055T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
55
182
5.0
V
A
mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 5 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Maximum Ratings
55
55
± 20
182
75
490
25
1.0
V
V
V
A
A
A
A
J
3 V/ns
G
D
TO-3P (IXTQ)
S
G
D
S
(TAB)
(TAB)
360 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
5.5 g
6g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID =25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
3.5 5.0 m Ω
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99682 (11/06)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
36
RG = 5Ω
34 VGS = 10V
VDS = 30V
32
30
28 I D = 50A
26 I D = 25A
24
22
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
160
tr
td(on) - - - -
58
140 TJ = 125ºC, VGS = 10V
I D = 50A
54
VDS = 30V
120 50
100 I D = 25A 46
80 42
60 38
40 34
20 30
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
48 74
t f td(off) - - - -
46
TJ = 125ºC
RG = 5Ω, VGS = 10V
70
VDS = 30V
44 66
42 62
40 58
38
36 TJ = 25ºC
54
50
34 46
24 28 32 36 40 44 48
ID - Amperes
IXTH182N055T
IXTQ182N055T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
38
36
34
RG = 5Ω
32 VGS = 10V
VDS = 30V
30
TJ = 25ºC
28
26
TJ = 125ºC
24
22
25
30 35 40
ID - Amperes
45
50
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
50
tf
td(off) - - - -
74
48 RG = 5Ω, VGS = 10V
71
VDS = 30V
46
68
44
I D = 25A
65
42 62
40 59
I D = 50A
38 56
36 53
34 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
180
tf
td(off) - - - -
160 TJ = 125ºC, VGS = 10V
VDS = 30V
140 I D = 25A
200
175
150
120 125
100 100
I D = 50A
80 75
60 50
40 25
4 6 8 10 12 14 16 18 20
RG - Ohms
© 2006 IXYS CORPORATION All rights reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTH182N055T.PDF ] | |
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