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IXTA110N055T7 の電気的特性と機能

IXTA110N055T7のメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTA110N055T7
部品説明 Power MOSFET ( Transistor )
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTA110N055T7 Datasheet, IXTA110N055T7 PDF,ピン配置, 機能
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA110N055T7
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
55
110
7.0
V
A
m
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 175° C, RG = 5
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
55 V
55 V
± 20
110
300
25
750
3
V
A
A
A
mJ
V/ns
1
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
230
-55 ... +175
175
-55 ... +175
300
260
3
W Features
°C Ultra-low On Resistance
°C
°C
Unclamped Inductive Switching (UIS)
rated
Low package inductance
°C - easy to drive and to protect
°C 175 ° C Operating Temperature
g Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 100 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
RDS(on)
VDS = VDSS
VGS = 0 V
TJ = 150° C
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
± 200 nA
2 µA
250 µA
5.5 7.0 m
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99680 (11/06)

1 Page





IXTA110N055T7 pdf, ピン配列
110
100
90
80
70
60
50
40
30
20
10
0
0
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
5V
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VDS - Volts
Fig. 3. Output Characteristics
@ 150ºC
VGS = 10V
9V
8V
7V
0.8
6V
5V
0.2 0.4 0.6 0.8
1
VDS - Volts
1.2 1.4 1.6
Fig. 5. RDS(on) Normalized to ID = 55A Value
vs. Drain Current
3
2.8 VGS = 10V
15V - - - -
2.6
TJ = 175ºC
2.4
2.2
2
1.8
1.6
1.4 TJ = 25ºC
1.2
1
0.8
0
40 80 120 160 200 240 280 320
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTA110N055T7
Fig. 2. Extended Output Characteristics
@ 25ºC
350
VGS = 10V
300 9V
250 8V
200
150 7V
100 6V
50 5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 55A Value
vs. Junction Temperature
2.4
2.2 VGS = 10V
2.0
1.8
1.6 I D = 110A
1.4 I D = 55A
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
120
110
100
90
80
70 External Lead Current Limit for TO-263 & TO-220
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXTA110N055T

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation
IXTA110N055T7

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation


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