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PDF IXTA110N055T Data sheet ( Hoja de datos )
| Número de pieza | IXTA110N055T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA110N055T
IXTP110N055T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
55
110
7.0
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 5 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 100 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Maximum Ratings
55 V
55 V
± 20
110
75
300
25
750
V
A
A
A
A
mJ
3 V/ns
230 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
3g
2.5 g
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
± 200 nA
2 µA
250 µA
5.8 7.0 m Ω
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99625 (11/06)
1 page  
31
30
29
28
27
26
25
24
23
22
21
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 5Ω
VGS = 10V
VDS = 27.5V
I D = 40A
I D = 20A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
100 38.0
t r td(on) - - - -
90 TJ = 125ºC, VGS = 10V
35.5
80 VDS = 27.5V
33.0
70 30.5
I D = 40A
60
28.0
50
I D = 20A
25.5
40 23.0
30 20.5
20 18.0
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
27 55.0
t f td(off) - - - -
RG = 5Ω, VGS = 10V
52.5
26
VDS = 27.5V
50.0
TJ = 125ºC
25
47.5
45.0
42.5
24 TJ = 25ºC
40.0
37.5
23 35.0
20 22 24 26 28 30 32 34 36 38 40
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTA110N055T
IXTP110N055T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
31
30
29
28 RG = 5Ω
VGS = 10V
27 VDS = 27.5V
26
TJ = 25ºC
25
24
23 TJ = 125ºC
22
21
20 22 24 26 28 30 32 34 36 38 40
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
26.0
50.0
t f td(off) - - - -
25.5
RG = 5Ω, VGS = 10V
VDS = 27.5V
I D = 20A
47.5
25.0
I D = 40A
45.0
24.5
42.5
24.0
40.0
23.5
37.5
23.0
35.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
120
110 t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
100 VDS = 27.5V
90
180
150
80 I D = 20A
120
70
60
I D = 40A
90
50
40 60
30
20 30
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33
RG - Ohms
IXYS REF: T_110N055T (3V) 7-11-06.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTA110N055T.PDF ] | |
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