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IXTA230N075T2 の電気的特性と機能

IXTA230N075T2のメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTA230N075T2
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTA230N075T2 Datasheet, IXTA230N075T2 PDF,ピン配置, 機能
Preliminary Technical Information
TrenchT2TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA230N075T2
IXTP230N075T2
VDSS =
ID25 =
RDS(on)
75V
230A
4.2mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
75
75
V
V
± 20 V
230 A
75 A
700 A
115 A
850 mJ
480 W
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
°C
°C
°C
°C
°C
Nm/lb.in.
2.5 g
3.0 g
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
±200 nA
5 μA
150 μA
4.2 mΩ
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z 175°C Operating Temperature
z High current handling capability
z Low RDS(on)
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z Electrical Motor Drive
z High current switching DC to DC
converter
© 2008 IXYS CORPORATION, All rights reserved
DS100042(09/08)

1 Page





IXTA230N075T2 pdf, ピン配列
Fig. 1. Output Characteristics
@ 25ºC
240
220
VGS = 15V
10V
200 9V
180 8V
160
140 7V
120
100
80
60 6V
40
20 5V
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VDS - Volts
Fig. 3. Output Characteristics
@ 150ºC
240
220
VGS = 15V
10V
200 9V
180 8V
160
140 7V
120
100
80 6V
60
40
20 5V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 115A Value
vs. Drain Current
2.6
2.4
2.2
2.0 TJ = 175ºC
1.8
1.6
VGS = 10V
15V - - - -
1.4
1.2
1.0
0.8 TJ = 25ºC
0.6
0
50 100 150 200 250 300
ID - Amperes
IXTA230N075T2
IXTP230N075T2
Fig. 2. Extended Output Characteristics
@ 25ºC
320 VGS = 15V
10V
280 9V
240
8V
200
7V
160
120
6V
80
40 5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 115A Value
vs. Junction Temperature
2.6
2.4 VGS = 10V
2.2
2.0
1.8 I D = 230A
1.6 I D = 115A
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
90
80 External Lead Current Limit
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved


3Pages


IXTA230N075T2 電子部品, 半導体
IXTA230N075T2
IXTP230N075T2
Fig. 19. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.00
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_230N075T2(V6)09-18-08

6 Page



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部品番号部品説明メーカ
IXTA230N075T2

Power MOSFET ( Transistor )

IXYS
IXYS


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