PDF IXTA220N055T Data sheet ( Hoja de datos )

Número de pieza	IXTA220N055T
Descripción	Power MOSFET ( Transistor )
Fabricantes	IXYS
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No Preview Available ! Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N055T IXTP220N055T VDSS = ID25 = RDS(on) ≤ 55 220 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220 Maximum Ratings 55 V 55 V ± 20 V 220 A 75 A 600 A 25 A 1.0 J 3 V/ns 430 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.0 g Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25, Notes 1, 2 Characteristic Values Min. Typ. Max. 55 V 2.0 4.0 V ± 200 nA 5 µA 250 µA 3.4 4.0 m Ω TO-263 (IXTA) G S TO-220 (IXTP) (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99517 (11/06) 1 page 75 70 65 60 55 50 45 40 35 30 25 20 25 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature RG = 5Ω VGS = 10V VDS = 30V I D = 50A I D = 25A 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 160 65 t r td(on) - - - - 140 TJ = 125ºC, VGS = 10V VDS = 30V 120 60 55 100 50 80 I D = 50A, 25A 45 60 40 40 35 20 30 4 6 8 10 12 14 16 18 20 RG - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 64 TJ = 125ºC 62 60 t f td(off) - - - - 58 RG = 5Ω, VGS = 10V 56 VDS = 30V 54 52 50 48 TJ = 25ºC 46 24 28 32 36 40 44 48 ID - Amperes 84 80 76 72 68 64 60 56 52 48 © 2006 IXYS CORPORATION All rights reserved IXTA 220N055T IXTP 220N055T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 75 70 65 60 55 RG = 5Ω VGS = 10V 50 VDS = 30V 45 TJ = 25ºC 40 35 TJ = 125ºC 30 25 25 30 35 40 ID - Amperes 45 50 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 65 I D = 25A, 50A 63 90 86 61 82 59 78 57 74 55 70 53 I D = 50A, 25A 66 51 62 49 tf td(off) - - - - 58 RG = 5Ω, VGS = 10V 47 VDS = 30V 54 45 50 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 190 260 t f td(off) - - - - 170 TJ = 125ºC, VGS = 10V VDS = 30V 150 230 200 130 I D = 25A 170 110 I D = 50A 140 90 110 70 80 50 50 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_220N055T (5V) 6-16-06.xls 5 Page

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